A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures

S. Dlimi; A. El kaaouachi; L. Limouny; B. A. Hammou

doi:10.1088/1674-4926/42/5/052001

Journals >Journal of Semiconductors >Volume 42 >Issue 5 >Page 052001 > Article

Journal of Semiconductors
Vol. 42, Issue 5, 052001 (2021)

A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures

S. Dlimi¹, A. El kaaouachi^1、2, L. Limouny¹, and B. A. Hammou²

Author Affiliations

¹Physics Department, Faculty of Sciences, Ibn Zohr University, BP 8106, Hay Dakhla, 80000 Agadir, Morocco

²Materials and Physicochemistry of the Atmosphere and Climate Group, Faculty of Sciences, Ibn Zohr University, BP 8106, 80000 Agadir, Morocco

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DOI: 10.1088/1674-4926/42/5/052001 Cite this Article

S. Dlimi, A. El kaaouachi, L. Limouny, B. A. Hammou. A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures[J]. Journal of Semiconductors, 2021, 42(5): 052001 Copy Citation Text

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Abstract

In this paper, we discuss low-temperature hopping-conductivity behavior in the insulating phase, in the absence of a magnetic field. We conduct a theoretical study of the crossover from hopping to activated transport in a GaAs two-dimensional hole system at low temperatures, finding that a crossover takes place from the Efros-Shklovskii variable-range hopping (VRH) regime to an activated regime in this system. This conductivity behavior in p-GaAs quantum wells is qualitatively consistent with the laws laid down in theories of localized electron interactions. Given sufficiently strong interactions, the holes in the localized states are able to hop collectively.

$ \sigma \left( T \right) \approx {\sigma _0}\exp^{{\left[ { - {{\left( {{T_0}/T} \right)}^p}} \right]}}{\rm{,}} $

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