The output power of terahertz resource is a critical parameter to limit the long range application of terahertz technology. To accomplish the high efficiency terahertz multiplier, two high-efficiency 170 GHz balanced doublers were built using the two planar Schottky diodes with diverse electrical specification. The employed equal circuit diode model, based on the developed high-frequency characteristic modeling, considered the IV characteristics, the limits drift velocity saturation of carries, DC series resistance and skin effect simultaneously. From the comparison and analysis of the simulated data, the impact of diode electrical parameter on the doubler performance was discussed. Test data show that the two 170 GHz balanced doublers show 11% and 24% highest efficiency respectively, 15 mW and 25 mW output power correspondingly across a 155-178 GHz band. As shown in measured result, the employed Schottky diode modeling and balance structure is suitable option to design high efficiency terahertz multiplier.