• Chinese Journal of Quantum Electronics
  • Vol. 36, Issue 6, 732 (2019)
Kechao LI1、2、*, Lin YANG2, Kai GUO2, Xiaofei QU1、2, Yi’ning CAO2, and Junhua WANG2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3969/j.issn.1007-5461. 2019.06.015 Cite this Article
    LI Kechao, YANG Lin, GUO Kai, QU Xiaofei, CAO Yi’ning, WANG Junhua. Output characterization for correlated photon-pair sources using silicon micro-ring resonators[J]. Chinese Journal of Quantum Electronics, 2019, 36(6): 732 Copy Citation Text show less

    Abstract

    The structure parameters, semiconductor characteristics and process morphology of silicon micro-ring resonators have important effects on the output repetition frequency of correlated photon-pair sources. The nonlinear loss of crystalline silicon is included in the simulation calculation of the output repetition frequency, and the spontaneous four-wave mixing effect model of all-pass silicon micro-ring resonators is deduced. Effects of the parameters such as the quality factor of all-pass silicon micro-ring resonators, radius of micro-ring resonators and free carrier life of crystalline silicon on output repetition frequency are investigated by using the model. Results show that when the external quality factor is 5×104, the pumping power reaches 15 mW and continues to increase, the output repetition frequency of the correlated photon-pairs decreases. Ideally, the smaller the radius of the micro-ring resonators is, the higher the output repetition frequency will be. For the silicon micro-ring resonators correlated photon-pair sources, the preferred solution to increase the output repetition frequency is to reduce the free carrier lifetime.
    LI Kechao, YANG Lin, GUO Kai, QU Xiaofei, CAO Yi’ning, WANG Junhua. Output characterization for correlated photon-pair sources using silicon micro-ring resonators[J]. Chinese Journal of Quantum Electronics, 2019, 36(6): 732
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