• Photonics Research
  • Vol. 11, Issue 10, 1713 (2023)
Zhiyong Jin1、†, Heming Huang2、†, Yueguang Zhou3, Shiyuan Zhao2, Shihao Ding2, Cheng Wang4, Yong Yao1, Xiaochuan Xu1, Frédéric Grillot2、5, and Jianan Duan1、*
Author Affiliations
  • 1State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen 518055, China
  • 2LTCI, Telecom Paris, Institut Polytechnique de Paris, 91120 Palaiseau, France
  • 3DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Lyngby, Denmark
  • 4School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 5Center for High Technology Materials, The University of New-Mexico, Albuquerque, New Mexico 87106, USA
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    DOI: 10.1364/PRJ.494393 Cite this Article Set citation alerts
    Zhiyong Jin, Heming Huang, Yueguang Zhou, Shiyuan Zhao, Shihao Ding, Cheng Wang, Yong Yao, Xiaochuan Xu, Frédéric Grillot, Jianan Duan. Reflection sensitivity of dual-state quantum dot lasers[J]. Photonics Research, 2023, 11(10): 1713 Copy Citation Text show less
    Optical spectrum of (a1) sole GS lasing and (a2) dual-state lasing of QD lasers. (b) Optical spectrum mapping with the increase of bias current for the dual-state QD laser. Dashed lines (1) and (2) in (b) mark the bias currents of (a1) and (a2), respectively.
    Fig. 1. Optical spectrum of (a1) sole GS lasing and (a2) dual-state lasing of QD lasers. (b) Optical spectrum mapping with the increase of bias current for the dual-state QD laser. Dashed lines (1) and (2) in (b) mark the bias currents of (a1) and (a2), respectively.
    Experimental setup for investigating the feedback sensitivity of QD lasers. BKR, backreflector; PC, polarization controller; OSA, optical spectrum analyzer; PD, photodiode; ESA, electrical spectrum analyzer.
    Fig. 2. Experimental setup for investigating the feedback sensitivity of QD lasers. BKR, backreflector; PC, polarization controller; OSA, optical spectrum analyzer; PD, photodiode; ESA, electrical spectrum analyzer.
    Optical (column 1) and RF (column 2) spectrum mappings for QD laser operating at (a) 0.72×, (b) 1×, and (c) 1.25×IthES. Dashed lines mark the critical feedback levels.
    Fig. 3. Optical (column 1) and RF (column 2) spectrum mappings for QD laser operating at (a) 0.72×, (b) 1×, and (c) 1.25×IthES. Dashed lines mark the critical feedback levels.
    (a) Optical and (b) RF spectra of QD lasers operated at 1×IthES subject to high feedback strength of −9.9 dB (red) and low feedback strength of −29 dB (blue).
    Fig. 4. (a) Optical and (b) RF spectra of QD lasers operated at 1×IthES subject to high feedback strength of 9.9  dB (red) and low feedback strength of 29  dB (blue).
    Schematic representation of the electronic structure and carrier dynamics of QD lasers under optical feedback.
    Fig. 5. Schematic representation of the electronic structure and carrier dynamics of QD lasers under optical feedback.
    GS threshold current, ES threshold current, and corresponding ES-GS threshold ratio with respect to ES-GS energy separation.
    Fig. 6. GS threshold current, ES threshold current, and corresponding ES-GS threshold ratio with respect to ES-GS energy separation.
    Samples of the bifurcation diagrams (column 1), time series (column 2), and GS phase portraits (column 3). (a) ΔEGSES=65 meV, I/IthES=1.0, and fext=−12.0 dB; (b) ΔEGSES=80 meV, I/IthES=1.31, and fext=−11.0 dB; (c) ΔEGSES=110 meV, I/IthES=0.87, and fext=−13.0 dB. Green vertical dashed lines in the first column mark the fext taken in the second and third columns; rcrit extracted from the bifurcation diagrams are marked in the first column.
    Fig. 7. Samples of the bifurcation diagrams (column 1), time series (column 2), and GS phase portraits (column 3). (a) ΔEGSES=65  meV, I/IthES=1.0, and fext=12.0  dB; (b) ΔEGSES=80  meV, I/IthES=1.31, and fext=11.0  dB; (c) ΔEGSES=110  meV, I/IthES=0.87, and fext=13.0  dB. Green vertical dashed lines in the first column mark the fext taken in the second and third columns; rcrit extracted from the bifurcation diagrams are marked in the first column.
    Critical feedback levels as a function of normalized bias currents (I/IthES). Triangles, diamonds, and squares are numerically calculated for different ES-GS energy separations, while the dots are extracted from measurement results.
    Fig. 8. Critical feedback levels as a function of normalized bias currents (I/IthES). Triangles, diamonds, and squares are numerically calculated for different ES-GS energy separations, while the dots are extracted from measurement results.
    Linewidth enhancement factor as a function of normalized bias currents (I/IthES) for GS and ES, respectively.
    Fig. 9. Linewidth enhancement factor as a function of normalized bias currents (I/IthES) for GS and ES, respectively.
    Damping factor and relaxation oscillation frequency versus normalized bias currents (I/IthES).
    Fig. 10. Damping factor and relaxation oscillation frequency versus normalized bias currents (I/IthES).
    SymbolDescriptionValue
    ERSRS transition energy0.97 eV
    EESES transition energy0.87 eV
    EGSGS transition energy0.82 eV
    τESRSRS to ES capture time6.3 ps
    τGSESES to GS relaxation time2.9 ps
    τRSESES to RS escape time2.7 ns
    τESGSGS to ES escape time10.4 ps
    τRSsponRS spontaneous emission time0.5 ns
    τESsponES spontaneous emission time0.5 ns
    τGSsponGS spontaneous emission time1.2 ns
    νgGroup velocity8.6×107  m/s
    βspSpontaneous emission factor1.0×104
    ΓpOptical confinement factor0.06
    τpPhoton lifetime4.1 ps
    τinInternal round trip time11.7 ps
    τExternal round trip time2.0 ns
    RFacet reflectivity0.32
    aGSGS differential gain5.0×1015  cm2
    aESES differential gain10×1015  cm2
    aRSRS differential gain2.5×1015  cm2
    ξESES gain compression factor1.0×1015  cm3
    ξGSGS gain compression factor1.0×1015  cm3
    NBTotal dot number1.0×107
    DRSTotal RS state number4.8×106
    VBActive region volume5.0×1011  cm3
    VRSRS region volume1.0×1011  cm3
    TDPolarization dephasing time0.1 ps
    Table 1. Parameters Used in the Simulation
    Zhiyong Jin, Heming Huang, Yueguang Zhou, Shiyuan Zhao, Shihao Ding, Cheng Wang, Yong Yao, Xiaochuan Xu, Frédéric Grillot, Jianan Duan. Reflection sensitivity of dual-state quantum dot lasers[J]. Photonics Research, 2023, 11(10): 1713
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