• Photonics Research
  • Vol. 11, Issue 10, 1713 (2023)
Zhiyong Jin1,†, Heming Huang2,†, Yueguang Zhou3, Shiyuan Zhao2..., Shihao Ding2, Cheng Wang4, Yong Yao1, Xiaochuan Xu1, Frédéric Grillot2,5 and Jianan Duan1,*|Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen 518055, China
  • 2LTCI, Telecom Paris, Institut Polytechnique de Paris, 91120 Palaiseau, France
  • 3DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Lyngby, Denmark
  • 4School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 5Center for High Technology Materials, The University of New-Mexico, Albuquerque, New Mexico 87106, USA
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    DOI: 10.1364/PRJ.494393 Cite this Article Set citation alerts
    Zhiyong Jin, Heming Huang, Yueguang Zhou, Shiyuan Zhao, Shihao Ding, Cheng Wang, Yong Yao, Xiaochuan Xu, Frédéric Grillot, Jianan Duan, "Reflection sensitivity of dual-state quantum dot lasers," Photonics Res. 11, 1713 (2023) Copy Citation Text show less

    Abstract

    This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers, showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold. This sensitivity can be degraded by increasing the excited-to-ground-state energy separation, which results in a high excited-to-ground-state threshold ratio. In addition, the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor, which leads to a low critical feedback level. These findings illuminate a path to fabricate reflection-insensitive quantum dot lasers for isolator-free photonic integrated circuits.
    dNRSdt=Iq+NESτRSESNRSτESRS(1ρES)NRSτRSspon+FRS,

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    dNESdt=(NRSτESRS+NGSτESGS)(1ρES)NESτGSES(1ρGS)NESτRSESNESτESsponΓpvggESSES+FES,

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    dNGSdt=NESτGSES(1ρGS)NGSτESGS(1ρES)NGSτGSsponΓpvggGSSGS+FGS,

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    dSESdt=(ΓpvggES1τp)SES+βspNESτESspon+FSES+2kτinSES(t)SES(tτ)cos(ΔϕES),

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    dSGSdt=(ΓpvggGS1τp)SGS+βspNGSτGSspon+FSGS+2kτinSGS(t)SGS(tτ)cos(ΔϕGS),

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    dϕESdt=12Γpvg(gGSκESGS+gESαES+gRSκESRS)+FϕESkτinSES(tτ)SES(t)sin(ΔϕES),

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    dϕGSdt=12Γpvg(gGSαGS+gESκGSES+gRSκGSRS)+FϕGSkτinSGS(tτ)SGS(t)sin(ΔϕGS),

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    gRS=aRSDRSVRS(2ρRS1),

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    gES=aES1+ξESSESNBVB(2ρES1),

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    gGS=aGS1+ξGSSGSNBVB(2ρGS1),

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    ρRS=NRSDRS,ρES=NES4NB,ρGS=NGS2NB,

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    ΔϕES=ψES+ϕES(t)ϕES(tτ),

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    ΔϕGS=ψGS+ϕGS(t)ϕGS(tτ),

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    κESRS,GS=ωESωRS,GS(ωRS,GSωES)TD1+(ωRS,GSωES)2TD2,

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    κGSRS,ES=ωGSωRS,ES(ωRS,ESωGS)TD1+(ωRS,ESωGS)2TD2,

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    rcrit=γ2(1+αH2)αH4τin2R4(1R)2,

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    Zhiyong Jin, Heming Huang, Yueguang Zhou, Shiyuan Zhao, Shihao Ding, Cheng Wang, Yong Yao, Xiaochuan Xu, Frédéric Grillot, Jianan Duan, "Reflection sensitivity of dual-state quantum dot lasers," Photonics Res. 11, 1713 (2023)
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