• Chinese Journal of Quantum Electronics
  • Vol. 21, Issue 1, 48 (2004)
[in Chinese]1、2、*, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, and [in Chinese]2
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Properties of MgF2 Thin Film by Pulsed Laser Deposition[J]. Chinese Journal of Quantum Electronics, 2004, 21(1): 48 Copy Citation Text show less
    References

    [2] Atanassov G. Mechanical, optical and structural properties of TiO2 and MgF2 thin films deposited by plasma ion assisted deposition [J]. Thin Solid Films, 1999, 342: 83-92.

    [3] Martinu L, Biederman H, Holland L. Thin films prepared by sputtering MgF2 in an rf planar magnetron [J].Vacuum, 1985, 35(12): 531.

    [4] Joseph M, Tabata H, Kawai T. Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition [J]. Appl. Phys. Lett., 1999, 74: 2534-2536.

    [5] Cho K G, Kumar D, Lee D G. Improved luminescence properties of pulsed laser deposited Eu:Y2O3 thin films on diamond coated silicon substrates [J]. Appl. Phys. Lett., 1997, 71: 3335-3337.

    [6] Shinde S R, Ogale S B, Greene R L. Superconducting MgB2 thin films by pulsed laser deposition [J]. Appl. Phys.Lett., 2001, 79: 227-229.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Properties of MgF2 Thin Film by Pulsed Laser Deposition[J]. Chinese Journal of Quantum Electronics, 2004, 21(1): 48
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