• Chinese Journal of Quantum Electronics
  • Vol. 21, Issue 1, 48 (2004)
[in Chinese]1、2、*, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]1、2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Properties of MgF2 Thin Film by Pulsed Laser Deposition[J]. Chinese Journal of Quantum Electronics, 2004, 21(1): 48 Copy Citation Text show less

    Abstract

    Optical thin films of MgF2 were successfully fabricated by pulsed laser deposition technique. The morphology and optical properties were investigated. The transmittance was 60%-80% in the visible light range, and more than 90% in the infrared range. The XPS showed the atom ratio of F: Mg in the obtained film was 1.9-2.1, very close to the bulk material. The refractive index of MgF2 thin film was -1.39 resulted from K-K calculation, also close to the value of 1.38 of the bulk MgF2.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Properties of MgF2 Thin Film by Pulsed Laser Deposition[J]. Chinese Journal of Quantum Electronics, 2004, 21(1): 48
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