Researching | Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure

Journals >Chinese Optics Letters >Volume 18 >Issue 5 >Page 051403 > Article

Chinese Optics Letters
Vol. 18, Issue 5, 051403 (2020)

Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure | Editors' Pick

Ming Zheng¹, Qingnan Yu¹, Hanxu Tai¹, Jianwei Zhang², Yongqiang Ning², and Jian Wu^1、*

Author Affiliations

¹Department of Applied Physics, Beihang University, Beijing 100191, China

²State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

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DOI: 10.3788/COL202018.051403 Cite this Article Set citation alerts

Ming Zheng, Qingnan Yu, Hanxu Tai, Jianwei Zhang, Yongqiang Ning, Jian Wu. Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure[J]. Chinese Optics Letters, 2020, 18(5): 051403 Copy Citation Text

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References

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Data from CrossRef

[1] Qingnan Yu, Yuanhong Meng, Ke Li, Zijian Liu, Hui Li, Xinyu Wang, Jian Wu. Luminescence mechanism of InGaAs self-fit well-cluster composite structure with super-wide spectra. Journal of Luminescence, 119435(2022).

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Ming Zheng, Qingnan Yu, Hanxu Tai, Jianwei Zhang, Yongqiang Ning, Jian Wu. Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure[J]. Chinese Optics Letters, 2020, 18(5): 051403

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