• Chinese Optics Letters
  • Vol. 18, Issue 5, 051403 (2020)
Ming Zheng1, Qingnan Yu1, Hanxu Tai1, Jianwei Zhang2, Yongqiang Ning2, and Jian Wu1、*
Author Affiliations
  • 1Department of Applied Physics, Beihang University, Beijing 100191, China
  • 2State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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    DOI: 10.3788/COL202018.051403 Cite this Article Set citation alerts
    Ming Zheng, Qingnan Yu, Hanxu Tai, Jianwei Zhang, Yongqiang Ning, Jian Wu. Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure[J]. Chinese Optics Letters, 2020, 18(5): 051403 Copy Citation Text show less
    Diagram of the InGaAs-based IRC structure. The left image shows the IRCs on the InGaAs surface, which were recorded with an AFM.
    Fig. 1. Diagram of the InGaAs-based IRC structure. The left image shows the IRCs on the InGaAs surface, which were recorded with an AFM.
    Principle of measuring ASE spectra from both ends of the sample under optical injection to obtain the SE spectra of the IRC laser structure.
    Fig. 2. Principle of measuring ASE spectra from both ends of the sample under optical injection to obtain the SE spectra of the IRC laser structure.
    ASE spectra of TE and TM polarization modes, which were measured from both ends of the edge-emitting IRC laser sample with an injection carrier density of 4.8×1017 cm−3.
    Fig. 3. ASE spectra of TE and TM polarization modes, which were measured from both ends of the edge-emitting IRC laser sample with an injection carrier density of 4.8×1017cm3.
    Experimental SE spectra in (a) TE mode and (b) TM mode with an InGaAs/GaAs IRC quantum confined laser structure.
    Fig. 4. Experimental SE spectra in (a) TE mode and (b) TM mode with an InGaAs/GaAs IRC quantum confined laser structure.
    Hybrid band structure consisting of the first conduction sub-band (C1) and the first valence sub-bands of heavy holes (HH1, black line) and light holes (LH1, blue line) due to the IRC effect in the InxGa1−xAs/GaAs material system.
    Fig. 5. Hybrid band structure consisting of the first conduction sub-band (C1) and the first valence sub-bands of heavy holes (HH1, black line) and light holes (LH1, blue line) due to the IRC effect in the InxGa1xAs/GaAs material system.
    Theoretical SE spectra in (a) TE mode and (b) TM mode with different injection carrier densities, where solid lines are the calculated SE curves with a standard In0.17Ga0.83As/GaAs quantum well regardless of the IRC effect, and dash lines are the experimental data from the InGaAs IRC laser sample.
    Fig. 6. Theoretical SE spectra in (a) TE mode and (b) TM mode with different injection carrier densities, where solid lines are the calculated SE curves with a standard In0.17Ga0.83As/GaAs quantum well regardless of the IRC effect, and dash lines are the experimental data from the InGaAs IRC laser sample.
    Ming Zheng, Qingnan Yu, Hanxu Tai, Jianwei Zhang, Yongqiang Ning, Jian Wu. Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure[J]. Chinese Optics Letters, 2020, 18(5): 051403
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