Implementing quantum controlled phase gates with trapped ions

Juan HE; Zhi-yong DING; Tao WU; Li-zhi YU; Zhi-xiang NI

doi:10.3969/j.issn.1007-5461.2011.04.007

Journals >Chinese Journal of Quantum Electronics >Volume 28 >Issue 4 >Page 429 > Article

Chinese Journal of Quantum Electronics
Vol. 28, Issue 4, 429 (2011)

Implementing quantum controlled phase gates with trapped ions

Juan HE^*, Zhi-yong DING, Tao WU, Li-zhi YU, and Zhi-xiang NI

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[in Chinese]

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DOI: 10.3969/j.issn.1007-5461.2011.04.007 Cite this Article

HE Juan, DING Zhi-yong, WU Tao, YU Li-zhi, NI Zhi-xiang. Implementing quantum controlled phase gates with trapped ions[J]. Chinese Journal of Quantum Electronics, 2011, 28(4): 429 Copy Citation Text

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Abstract

A scheme for implementing three-qubit quantum controlled phase gate is proposed in the trap-ion system. It only requires the resonant interaction between trapped ions and lasers. Compared to the scheme in other papers, the steps needed are much less. In addition, the scheme doesn’t need any type of measurement.

Keywords

quantum information quantum phase gate resonance trapped ions

HE Juan, DING Zhi-yong, WU Tao, YU Li-zhi, NI Zhi-xiang. Implementing quantum controlled phase gates with trapped ions[J]. Chinese Journal of Quantum Electronics, 2011, 28(4): 429

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