Lianjun Jia, Tianping Zhang, Mingzheng Liu, Juanjuan Chen, Yanhui Jia. Influence of Accelerator Grid Voltage on Grid Performance of Dual Stage Ion Optical System[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051202
- Laser & Optoelectronics Progress
- Vol. 55, Issue 5, 051202 (2018)
Fig. 1. Calculation area and boundary conditions
Fig. 2. Flow chart of simulation calculation
Fig. 3. Equipotential line graph under different accelerator grid voltages. (a) -150 V; (b) -180 V; (c) -200 V;(d) -250 V; (e) -300 V
Fig. 4. Space position distribution of beam ions. (a) -300 V; (b) -250 V; (c) -200 V; (d) -180 V; (e) -150 V
Fig. 5. Effect of accelerator grid voltage on beam divergence angle
Fig. 6. Effect of accelerator grid voltage on impingement CEX ion number. (a) -150 V; (b) -180 V; (c) -200 V; (d) -250 V; (e) -300 V
Fig. 7. Effect of acceleration grid voltage on impingement CEX ion current. (a) Wall of hole; (b) upstream and downstream surface of accelerator grid
Fig. 8. (a) Sputtering yield and (b) sputtering rate under different accelerator grid voltages
Fig. 9. Beam flow photo with the accelerator grid voltage of -250 V
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Table 1. Screen grid geometrical parameters and beam current of duel stage accelerating ion optical system
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Table 2. Operating parameters of duel stage accelerating ion thruster
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Table 3. Simulation results of acceleration grid impingement CEX ion in the hole wall
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