• Infrared and Laser Engineering
  • Vol. 52, Issue 11, 20230198 (2023)
Zhengdong Fan1,2, Hangyu Peng1, Jun Zhang1, Jingbo Wang1..., Jiye Zhang1 and Lijun Wang1|Show fewer author(s)
Author Affiliations
  • 1Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/IRLA20230198 Cite this Article
    Zhengdong Fan, Hangyu Peng, Jun Zhang, Jingbo Wang, Jiye Zhang, Lijun Wang. 650 nm semiconductor laser based on external cavity spectral combination[J]. Infrared and Laser Engineering, 2023, 52(11): 20230198 Copy Citation Text show less
    References

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    [21] Hangyu Peng, Jun Zhang, Xihong Fu, . High-efficiency external cavity spectral-beam-combined diode laser array. Chinese Journal of Lasers, 40, 0702015(2013).

    [22] Jun Zhang, Hangyu Peng, Xihong Fu, . High-brightness 800-nm semiconductor laser source based on spectral beam combining. Chinese Journal of Lasers, 47, 0701021(2020).

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    Zhengdong Fan, Hangyu Peng, Jun Zhang, Jingbo Wang, Jiye Zhang, Lijun Wang. 650 nm semiconductor laser based on external cavity spectral combination[J]. Infrared and Laser Engineering, 2023, 52(11): 20230198
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