• Infrared and Laser Engineering
  • Vol. 52, Issue 11, 20230198 (2023)
Zhengdong Fan1,2, Hangyu Peng1, Jun Zhang1, Jingbo Wang1..., Jiye Zhang1 and Lijun Wang1|Show fewer author(s)
Author Affiliations
  • 1Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/IRLA20230198 Cite this Article
    Zhengdong Fan, Hangyu Peng, Jun Zhang, Jingbo Wang, Jiye Zhang, Lijun Wang. 650 nm semiconductor laser based on external cavity spectral combination[J]. Infrared and Laser Engineering, 2023, 52(11): 20230198 Copy Citation Text show less
    Schematic diagram of spectral beam combining structure
    Fig. 1. Schematic diagram of spectral beam combining structure
    Laser characteristics before spectrum combining. (a) Free lasing spectrum before wavelength locking; (b) Optical field distribution before wavelength locking
    Fig. 2. Laser characteristics before spectrum combining. (a) Free lasing spectrum before wavelength locking; (b) Optical field distribution before wavelength locking
    Laser characteristics after spectral combination. (a) Laser spectrum after spectral combination; (b) Light field distribution after spectrum combining
    Fig. 3. Laser characteristics after spectral combination. (a) Laser spectrum after spectral combination; (b) Light field distribution after spectrum combining
    Power curve and E-O conversion efficiency curve of free running and spectral combining
    Fig. 4. Power curve and E-O conversion efficiency curve of free running and spectral combining
    Linear fitting of beam diameter
    Fig. 5. Linear fitting of beam diameter
    Zhengdong Fan, Hangyu Peng, Jun Zhang, Jingbo Wang, Jiye Zhang, Lijun Wang. 650 nm semiconductor laser based on external cavity spectral combination[J]. Infrared and Laser Engineering, 2023, 52(11): 20230198
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