• Laser & Optoelectronics Progress
  • Vol. 61, Issue 9, 0900009 (2024)
Chenyang Zhang1、2, Defeng Mo2, Hongyan Xu2, Yingjie Ma2, Xue Li2, and Wenxian Su1、*
Author Affiliations
  • 1School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2National Key Laboratory of Infrared Detection Technologies, Shanghai Institute of Technical Physis, Chinese Academy of Sciences, Shanghai 200083, China
  • show less
    DOI: 10.3788/LOP231228 Cite this Article Set citation alerts
    Chenyang Zhang, Defeng Mo, Hongyan Xu, Yingjie Ma, Xue Li, Wenxian Su. Progress in Packaging Technology of InGaAs Avalanche Photodiode Detectors[J]. Laser & Optoelectronics Progress, 2024, 61(9): 0900009 Copy Citation Text show less

    Abstract

    InGaAs single-photon detectors are extensively used in laser 3D imaging, long-distance high-speed digital communication, free-space optical communication, and quantum communication. Different packaging formats, including coaxial packaging, butterfly packaging, and pin grid array packaging, have been designed for unit, line array, and small panel array devices. The impact of the temperature on the efficacy of InGaAs single-photon devices and the methodologies for controlling component temperature are discussed. Detailed comparisons and analyses of high-precision coupling methods for optical components such as microlenses, lenses, optical fibers, etc. to the semiconductor are provided. For high-frequency signal output, the lead type, wiring method, packaging structure design, and other issues are reviewed, and the development trend of the InGaAs single-photon detectors is forecasted.
    Chenyang Zhang, Defeng Mo, Hongyan Xu, Yingjie Ma, Xue Li, Wenxian Su. Progress in Packaging Technology of InGaAs Avalanche Photodiode Detectors[J]. Laser & Optoelectronics Progress, 2024, 61(9): 0900009
    Download Citation