M. Benaicha, L. Dehimi, F. Pezzimenti, F. Bouzid. Simulation analysis of a high efficiency GaInP/Si multijunction solar cell[J]. Journal of Semiconductors, 2020, 41(3): 032701
- Journal of Semiconductors
- Vol. 41, Issue 3, 032701 (2020)
Fig. 1. (Color online) Schematic cross-section of the MMJ GaInP/Si solar cell.
Fig. 2. (Color online) Interpolation of (a) n and (b) K for Ga0.5In0.5P.
Fig. 3. (Color online) J–V curve of the GaAs(n+)/GaAs(p+) TJ in dark.
Fig. 4. (Color online) J –V characteristics of the Si and GaInP single cells.
Fig. 5. (Color online) J–V curve for both the single junction cells and the InGaP tandem structure.
Fig. 6. (Color online) EQE of the GaInP top-cell and Si bottom-cell in the stacked structure.
Fig. 7. (Color online) (a) Energy band diagram of the GaInP/Si tandem cell at thermodynamic equilibrium; E V and E C are the energy levels of the valence and conduction band, respectively. (b) Electric field profile.
Fig. 8. (Color online) Comparison between the J–V curves of the MMJ tandem cell and the GaInP/Si mechanical stacked structure.
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Table 1. Structure of the simulated GaInP/Si MMJ tandem cell.
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Table 2. Physical models.
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Table 3. PV parameters extracted from Fig. 4 .
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Table 4. PV parameters extracted from Fig. 5 .
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Table 5. PV parameters of the proposed GaInP/Si tandem solar cells.
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