Polarization Analysis of a Real High Numerical Aperture Optical LithographyLuo Hongmei

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

doi:10.3788/aos201333.1122002

[1] R A Chipman. Polarization analysis of optical systems [C]. SPIE, 1989, 28(2): 90-99.

[2] D G Flagello, A E Rosenbluth, C Progler, et al.. Understanding high numerical aperture optical lithography [J]. Microelectronic Engineering, 1992, 17(1): 105-108.

[3] Pang Wubin, Cen Zhaofeng, Li Xiaotong, et al.. The effects of polarization light on optical imaging system [J]. Acta Physica Sinica, 2012, 61(23): 234202.

[4] Liu Chao, Cen Zhaofeng, Li Xiaotong, et al.. Ray ellipse method of analyzing the power and polarization state of partially polarized light [J]. Acta Physica Sinica, 2012, 61(13): 134201.

[5] J Ullmann, M Mertin, H Lauth, et al.. Coated optics for DUV-excimer laser applications [C]. SPIE, 2000, 3902: 514-527.

[6] S Günster, D Ristau, S Bosch. Spectrophotometric determination of absorption in the DUV/VUV spectral range for MgF2 and LaF3 thin films [C]. SPIE, 2000, 4099: 299-310.

[7] Nano Particle Coating [OL]. 2008. http://www.nikon.com/about/technology/rd/core/material/nano_particle/.

[8] Shang Shuzhen, Shao Jianda, Fan Zhengxiu. Low-loss 193 nm anti-reflection coatings [J]. Acta Physica Sinica, 2008, 57(3): 1946-1950.

[9] M C Liu, C C Lee, M Kaneko, et al.. Microstructure-related properties at 193 nm of MgF2 and GdF3 films deposited by a resistive-heating boat [J]. Appl Opt, 2006, 45(7): 1368-1374.

[10] D Ristau, S Günster, S Bosch, et al.. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation [J]. Appl Opt, 2002, 41(16): 3196-3204.

[11] Xue Chunrong, Yi Kui, Qi Hongji, et al.. Optical constants of fluoride films in the DUV range [J]. Acta Physica Sinica, 2009, 58(7): 5035-5040.

[12] Chang Yanhe, Jin Chunshui, Li Chun, et al.. Optical characterization and structure properties of ultraviolet LaF3 thin films by thermal evaporation [J]. Chinese J Lasers, 2012, 39(10): 1007002.

[13] S Owa, H Nagasaka, Y Ishii, et al.. Update on 193 nm immersion exposure tool [C]. Litho Forum, International SEMATECH, Los Angeles, 2004: 1-51.

[14] C Khler, W de Boeij, K van Ingen-Schenau, et al.. Imaging enhancements by polarized illumination: theory and experimental verification [C]. SPIE, 2005, 5754: 734-750.

[15] M Totzeck, P Grupner, T Heil, et al.. Polarization influence on imaging [J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 2005, 4(3): 031108.

[16] C Mack. Fundamental Principles of Optical Lithography: the Science of Microfabrication [M]. West Susses, England: John Wiley and Sons Ltd, 2008, 429-434.

[17] Zhang Wei, Gong Yan. Vector analysis of diffractive optical elements for off-axis illumination of projection lithographic system [J]. Acta Optica Sinica, 2011, 31(10): 1005002.

[18] Xing Shasha, Wu Rengmao, Li Haifeng, et al.. Freeform surface design of off-axis illumination in projection lithography [J]. Acta Optica Sinica, 2011, 31(3): 032202.

[19] Y Omura. Projection Exposure Method and Apparatus and Projection Optical System [P]. European Patent: 1139138, 1999.

[20] Zemax Development Corporation. Zemax Optical Design Program User's Guide [M]. Michigan: Focus Software Inc, 2010, 592.

[21] Hu Dawei, Li Yanqiu, Liu Xiaolin. Optical design of hyper numerical-aperture schwarzschild projection lithographic lens [J]. Acta Optica Sinica, 2013, 33(1): 0122004.

CLP Journals