• Journal of Infrared and Millimeter Waves
  • Vol. 30, Issue 6, 511 (2011)
WANG Tao1、*, YANG Jin1、2, YIN Fei1, WANG Jing-Wei1, HU Ya-Nan1、2, ZHANG Li-Chen1、2, and YIN Jing-Zhi3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    WANG Tao, YANG Jin, YIN Fei, WANG Jing-Wei, HU Ya-Nan, ZHANG Li-Chen, YIN Jing-Zhi. Growth of short-period InAs/GaSb superlattices for infrared sensing[J]. Journal of Infrared and Millimeter Waves, 2011, 30(6): 511 Copy Citation Text show less
    References

    [1] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. J.Appl. Phys,1987,62(6):25452548.

    [2] Sullivan G J, Ikhlassi A, Bergman J, et al. Compositional variations in MBE grown InAs/GaSb superlattices for infrared detector applications[J]. Infrared Technology and Applications,2005,5783:131137.

    [3] Grein C H, Young P M, Ehrenreich H. Minority carrier life-times in ideal InGaSb/InAs superlattices[J]. Appl. Phys. Lett,1992,61(24):29052907.

    [4] Miles R H , Chow D H, Schulman J N, et al. Infrared optical characterization of InAs/Ga1-xInxSb superlattices[J]. Appl. Phys.Lett,1990,57(8):801803.

    [5] Johnson J L, Samoska LA, Goddard AC, et al. Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb superlattice in heterojunctions with GaSb[J]. J. Appl. Phys,1996,80(2):11161127.

    [6] Johnson N F, Ehrenreich H, Hui PM, et al. Electronic and optical properties of III-V and II-VI semiconductor superlattices[J]. Phys. Rev,1990,B41(6):36553669.

    [7] Shao J, Lu W, Lu X, et al. Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer[J].Rev.Sci.Instrum,2006,77(6):063104-6.

    WANG Tao, YANG Jin, YIN Fei, WANG Jing-Wei, HU Ya-Nan, ZHANG Li-Chen, YIN Jing-Zhi. Growth of short-period InAs/GaSb superlattices for infrared sensing[J]. Journal of Infrared and Millimeter Waves, 2011, 30(6): 511
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