The InAs/GaSb superlattice were prepared by metal organic chemical vapor deposition (MOCVD) on GaSb substrate. The optimized thickness and the various growth parameters were explored as well as the importance of source flux control. The photoluminescence (PL) spectra, x-ray diffraction data (XRD) and the surface topography map showed that the superlattice can response to incident light with long wavelength of 10 μm, and has good surface morphology and epitaxial layer quality.