Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Kangkai Tian; Chunshuang Chu; Wengang Bi; Yonghui Zhang; Zihui Zhang

doi:10.3788/LOP56.060001

Journals >Laser & Optoelectronics Progress >Volume 56 >Issue 6 >Page 060001 > Article

Laser & Optoelectronics Progress
Vol. 56, Issue 6, 060001 (2019)

Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Kangkai Tian^1、2, Chunshuang Chu^1、2, Wengang Bi^1、2, Yonghui Zhang^1、2、**, and Zihui Zhang^1、2、*

Author Affiliations

¹ Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

² Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

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DOI: 10.3788/LOP56.060001 Cite this Article Set citation alerts

Kangkai Tian, Chunshuang Chu, Wengang Bi, Yonghui Zhang, Zihui Zhang. Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes[J]. Laser & Optoelectronics Progress, 2019, 56(6): 060001 Copy Citation Text

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