• Spectroscopy and Spectral Analysis
  • Vol. 40, Issue 11, 3394 (2020)
Jie TONG1、1, Yu-qing LEI1、1, Ying-feng LI1、1, Mei-cheng LI1、1, Ming-hao ZHANG1、1, and Zhong-liang GAO1、1
Author Affiliations
  • 1[in Chinese]
  • 11. China Electric Power Research Institute, Beijing 100192, China
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    DOI: 10.3964/j.issn.1000-0593(2020)11-3394-05 Cite this Article
    Jie TONG, Yu-qing LEI, Ying-feng LI, Mei-cheng LI, Ming-hao ZHANG, Zhong-liang GAO. Influence of Incident Angle and Polarization on Spectral Behaviors of Tapered Silicon Nanowire[J]. Spectroscopy and Spectral Analysis, 2020, 40(11): 3394 Copy Citation Text show less
    T-SiNW under irradiation with various incident angles and polarization states
    Fig. 1. T-SiNW under irradiation with various incident angles and polarization states
    Impacts of angle and polarization of incident light on the spectral behaviors of T-SiNW(a): Averaged extinction spectra for pol1 and pol2 light; (b): Extinction spectra for incident light with distinguished polarizations; (c): Averaged absorption spectra for pol1 and pol2 light, and their difference (inset); (d): Averaged Abs./Ext. ratio for pol1 and pol2 light, and their difference (inset)
    Fig. 2. Impacts of angle and polarization of incident light on the spectral behaviors of T-SiNW
    (a): Averaged extinction spectra for pol1 and pol2 light; (b): Extinction spectra for incident light with distinguished polarizations; (c): Averaged absorption spectra for pol1 and pol2 light, and their difference (inset); (d): Averaged Abs./Ext. ratio for pol1 and pol2 light, and their difference (inset)
    Near-field mappings for T-SiNW(a): Resonance at λ=0.44 μm under pol2 light with various θ; (b): Resonances at λ=0.45, 0.54, and 0.60 μm, under pol1 light with θ=60°; and at λ=0.8 μm under pol1 light with θ=90°
    Fig. 3. Near-field mappings for T-SiNW
    (a): Resonance at λ=0.44 μm under pol2 light with various θ; (b): Resonances at λ=0.45, 0.54, and 0.60 μm, under pol1 light with θ=60°; and at λ=0.8 μm under pol1 light with θ=90°
    Angular distribution of scattered light by T-SiNWScattered light by (a) a fully upright and (b) a fully inverted T-SiNW; a flat-laid T-SiNW under irradiation of (c) pol1 and (d) pol2; T-SiNW under irradiation with (e) θ=60° and (f) θ= 120°
    Fig. 4. Angular distribution of scattered light by T-SiNW
    Scattered light by (a) a fully upright and (b) a fully inverted T-SiNW; a flat-laid T-SiNW under irradiation of (c) pol1 and (d) pol2; T-SiNW under irradiation with (e) θ=60° and (f) θ= 120°
    Jie TONG, Yu-qing LEI, Ying-feng LI, Mei-cheng LI, Ming-hao ZHANG, Zhong-liang GAO. Influence of Incident Angle and Polarization on Spectral Behaviors of Tapered Silicon Nanowire[J]. Spectroscopy and Spectral Analysis, 2020, 40(11): 3394
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