Yan CHEN, Fan-Zhong MENG, Yuan FANG, Ao ZHANG, Jian-Jun GAO. Design of 220 GHz power amplifier based on 90 nm InP HEMT process[J]. Journal of Infrared and Millimeter Waves, 2022, 41(6): 1037
- Journal of Infrared and Millimeter Waves
- Vol. 41, Issue 6, 1037 (2022)
Fig. 1. Scanning electron microscope picture of the T-gate
Fig. 2. Transfer characteristics of the 2×25 μm InP HEMT device
Fig. 3. Current gain H21 and U gain of 2×25 μm InP HEMT device（Bias：Vg=-0.4 V，Vd=2 V）
Fig. 4. Single stage common source amplifier
Fig. 5. The Wilkinson power divider layout
Fig. 6. Simulation curve of the power divider
Fig. 7. Schematic diagram of the PA
Fig. 8. Single-channel amplifier gain simulation curve
Fig. 9. Output power versus input power
Fig. 10. Photograph of the PA TMIC
Fig. 11. Measurement and simulation results for S-parameters of the 220 GHz PA MMIC
Fig. 12. Power measurement diagram
Fig. 13. Measurement and simulation results for the saturated output power of the 220 GHz PA MMIC
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Table 1. Comparison of performance of 220 GHz power amplifier
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