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    Journals >Acta Physica Sinica >Volume 69 >Issue 2 >Page 028101-1 > Article
    • Acta Physica Sinica
    • Vol. 69, Issue 2, 028101-1 (2020)
    Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations
    Jin-Feng Zhang1, Jia-Min Xu1, Ze-Yang Ren1、*, Qi He1, Sheng-Rui Xu1, Chun-Fu Zhang1, Jin-Cheng Zhang1、2, and Yue Hao1
    Author Affiliations
  • 1State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
  • 2Shaanxi Joint Key Laboratory of Graphene, Xi’an 710071, China
    • show less
    DOI: 10.7498/aps.69.20191013 Cite this Article
    Jin-Feng Zhang, Jia-Min Xu, Ze-Yang Ren, Qi He, Sheng-Rui Xu, Chun-Fu Zhang, Jin-Cheng Zhang, Yue Hao. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations[J]. Acta Physica Sinica, 2020, 69(2): 028101-1 Copy Citation Text show less
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    Jin-Feng Zhang, Jia-Min Xu, Ze-Yang Ren, Qi He, Sheng-Rui Xu, Chun-Fu Zhang, Jin-Cheng Zhang, Yue Hao. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations[J]. Acta Physica Sinica, 2020, 69(2): 028101-1
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