4&#215;25 GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique

Han Ye; Qin Han; Qianqian Lv; Pan Pan; Junming An; Xiaohong Yang; Yubing Wang; Rongrui Liu

doi:10.3788/COL201715.082301

Journals >Chinese Optics Letters >Volume 15 >Issue 8 >Page 082301 > Article

Chinese Optics Letters
Vol. 15, Issue 8, 082301 (2017)

4 \times 25 GHz

uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique

Han Ye¹, Qin Han^1、2、*, Qianqian Lv¹, Pan Pan¹, Junming An^1、3, Xiaohong Yang^1、3, Yubing Wang¹, and Rongrui Liu¹

Author Affiliations

¹State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/COL201715.082301 Cite this Article Set citation alerts

Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu.

4 \times 25 GHz

uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique[J]. Chinese Optics Letters, 2017, 15(8): 082301 Copy Citation Text

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Fig. 1. Butt-joint situation of AWG-UTC chip.

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Fig. 2. Butt-joint (a) with and (b) without the extended matching layer.

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Fig. 3. (Color online) Simulated quantum efficiency of the PD with increasing distance between the butt-joint interface and the PD mesa.

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Fig. 4. SEMs in device fabrication with (a): the butt-joint interface after SAG; (b): the overgrown ridge at the interface; (c): deep-ridge etched arrayed waveguides; (d): the PD after the AWG is cleaved off.

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Fig. 5. Top views of the (a) 20 nm and (b) 800 GHz channel spacing AWG-UTC chips.

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Fig. 6. (Color online) Spectral photoresponse of the 20 nm channel spacing AWG-UTC chip.

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Fig. 7. (Color online) Spectral photo-response of the 800 GHz channel spacing AWG-UTC chip.

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Fig. 8. (Color online) Photocurrents of the PDs without the AWG.

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Fig. 9. (Color online) Bandwidth results for the AWG-UTC chips.

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Composition	Thickness (nm)	Doping	n@1310 nm	Function
${In}_{0.53} {Ga}_{0.47} As$	30	$P^{+}$	3.65-i0.148	p-contact
InP	300	$P^{+}$	3.21	Electron blocker
${In}_{0.53} {Ga}_{0.47} As$	590	P, graded	3.65-i0.148	Absorber
InGaAsP (Q1.24)	40	$N^{-}$	3.42	Cliff layer
InGaAsP (Q1.24)	430	U.I.D	3.42	Collector
InP	100	N	3.21	Dopant blocker
InGaAsP (Q1.24)	500	$N^{+}$	3.42	Matching layer
InP	150	U.I.D	3.21	Etch stop
InGaAsP (Q1.05)	500	U.I.D	3.298	AWG core
InP	1000	U.I.D	3.21	Bottom cladding

Table 1. Epitaxial Structure Before Regrowth.

Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu.

4 \times 25 GHz

uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique[J]. Chinese Optics Letters, 2017, 15(8): 082301

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