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    Journals >Chinese Optics Letters >Volume 15 >Issue 8 >Page 082301 > Article
    • Chinese Optics Letters
    • Vol. 15, Issue 8, 082301 (2017)
    4×25  GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique
    Han Ye1, Qin Han1、2、*, Qianqian Lv1, Pan Pan1, Junming An1、3, Xiaohong Yang1、3, Yubing Wang1, and Rongrui Liu1
    Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/COL201715.082301 Cite this Article Set citation alerts
    Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu. 4×25  GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique[J]. Chinese Optics Letters, 2017, 15(8): 082301 Copy Citation Text show less
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    Article index updated: May. 18, 2024
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    The article is cited by 4 article(s) from Web of Science.
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    Han Ye, Qin Han, Qianqian Lv, Pan Pan, Junming An, Xiaohong Yang, Yubing Wang, Rongrui Liu. 4×25  GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique[J]. Chinese Optics Letters, 2017, 15(8): 082301
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