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Journals >Acta Photonica Sinica >Volume 48 >Issue 12 >Page 1248004 > Article

Acta Photonica Sinica
Vol. 48, Issue 12, 1248004 (2019)

I-V and C-V Characteristics of Graphene/Silicon Photodetector

Xin-yu FANG and Jun CHEN^*

Author Affiliations

School of Electronic and Information Engineering, Soochow University, Suzhou, Jiangsu 215006, China

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DOI: 10.3788/gzxb20194812.1248004 Cite this Article

Xin-yu FANG, Jun CHEN. I-V and C-V Characteristics of Graphene/Silicon Photodetector[J]. Acta Photonica Sinica, 2019, 48(12): 1248004 Copy Citation Text

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References

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[6] A ALNUAIMI, I ALMANSOURI, I SAADAT. Interface engineering of graphene-silicon Schottky junction solar cells with an Al₂O₃ interfacial layer grown by atomic layer deposition. RSC Advances, 8, 10593-10597(2018).

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[10] T STANISLAV, Y ROMAN, G JAN. Electricalcharacterization of graphite/InP schottky diodes by I-V-T and C-V methods. Journal of Electronic Materials, 47, 4950-4954(2018).

[11] Jiang-hong WU, Zhen-wei YANG, Cai-yu QIU. Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles. Nanoscale, 10, 8023-8030(2018).

[12] Yao WU, Xin YAN, Xia ZHANG. A monolayer graphene/GaAs nanowire array Schottky junction self-powered photodetector. Applied Physics Letters, 109, 183101(2016).

[13] Xiang-qiang LI, Wen-chao CHEN, Shen-jiao ZHANG. 18.5% efficient graphene/GaAs van der Waals heterostructure solar cell. Nano Energy, 16, 310-319(2015).

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[15] D B ANTONIO, L GIUSEPPE, G FILIPPO. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect. 2D Materials, 4, 025075(2017).

[16] S K CHEUNG, N W CHEUNG. Extraction of Schottky diode parameters from forward current-voltage characteristics. Applied Physics Letters, 49, 85-87(1986).

[17] D B ANTONIO, L GIUSEPPE, L LAURA. Graphene-silicon schottky diodes for photodetection. IEEE Transactions on Nanotechnology, 17, 1133-1137(2018).

[18] L GIUSEPPE, G FILIPPO, G LUCA. I-V and C-V characterization of a high-responsivity graphene/silicon photodiode with embedded MOS capacitor. Nano Materials, 7, 158-165(2017).

[19] S A YERIşKIN, M BALBAşı, i ORAK. Frequency dependent electrical characteristics and origin of anomalous capacitance-voltage (C-V) peak in Au/(graphene-doped PVA)/n-Si capacitors. Materials in Electrons, 28, 7819-7826(2017).

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Xin-yu FANG, Jun CHEN. I-V and C-V Characteristics of Graphene/Silicon Photodetector[J]. Acta Photonica Sinica, 2019, 48(12): 1248004

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