Xin-yu FANG, Jun CHEN. I-V and C-V Characteristics of Graphene/Silicon Photodetector[J]. Acta Photonica Sinica, 2019, 48(12): 1248004
- Acta Photonica Sinica
- Vol. 48, Issue 12, 1248004 (2019)
Fig. 1. Fabrication process of Gr/n-Si Schottky photodetector
Fig. 2. SEM image of Gr film
Fig. 3. Gr/n-Si光电探测器的I -V 曲线I -V curves of Gr/n-Si photodetector
Fig. 4. 零偏压时Gr/n-Si肖特基结能带图Energy band diagram of Gr/n-Si Schottky junction at zero bias
Fig. 5. 反向偏压光照下Gr/n-Si光电探测器的结构及能带示意图Structure and energy band diagrams of Gr/n-Si photodetector at reverse bias under illumination
Fig. 6. 在30~800 kHz不同频率下测量的Gr/n-Si肖特基探测器的C -V 曲线C -V c urves of Gr/n-Si photodetector measured at different frequencies from 30~800 kHz
Fig. 7. 光照下考虑SiNx 绝缘层的Gr/n-Si肖特基结能带图Energy band diagram of Gr/n-Si Schottky junction with SiNx insulator layer under illumination
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Table 1. The experimental data of V0, Nd, WD, Φn, ΦB0 measured at different frequencies at room temperature
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