Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation

Wensi Cai; Haiyun Li; Mengchao Li; Zhigang Zang

doi:10.1088/1674-4926/43/3/034102

Journals >Journal of Semiconductors >Volume 43 >Issue 3 >Page 034102 > Article

Journal of Semiconductors
Vol. 43, Issue 3, 034102 (2022)

Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation

Wensi Cai, Haiyun Li, Mengchao Li, and Zhigang Zang

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Key Laboratory of Optoelectronic Technology & System (Ministry of Education), Chongqing University, Chongqing 400044, China

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DOI: 10.1088/1674-4926/43/3/034102 Cite this Article

Wensi Cai, Haiyun Li, Mengchao Li, Zhigang Zang. Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation[J]. Journal of Semiconductors, 2022, 43(3): 034102 Copy Citation Text

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(Color online) (a) Hall mobility and carrier concentration of the IZO:Al films. (b) Absorbance and corresponding bandgap (inset) of the IZO:Al films. Surface morphology of IZO films doped with (c) 0%, (d) 1%, (e) 3% and (f) 5% Al.

Fig. 1. (Color online) (a) Hall mobility and carrier concentration of the IZO:Al films. (b) Absorbance and corresponding bandgap (inset) of the IZO:Al films. Surface morphology of IZO films doped with (c) 0%, (d) 1%, (e) 3% and (f) 5% Al.

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Fig. 2. (Color online) O 1s spectra of IZO:Al films doped with (a) 0%, (b) 1%, (c) 3% and (d) 5% Al.

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Fig. 3. (Color online) Transfer characteristics of IZO:Al TFTs (a) without and (b) with an OTES top surface treatment. The insets show images of a water drop on the surface of the IZO:Al films. (c) Schematic diagrams of TFT structures and OTES formation on IZO:Al surface. R represents C₁₈H₃₇.

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Fig. 4. (Color online) Threshold voltage shift of IZO:Al TFTs under (a) a positive bias stress (PBS) and (b) a negative bias stress (NBS). Transfer characteristics of (c) 0% and (d) 1% Al doped IZO TFTs before and after being stored in ambient air for 4 months.

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Fig. 5. (Color online) (a) Current density as a function of applied voltage for Si/AlO_x/Al capacitors. (b) Surface morphology of AlO_x. (c) Output and (d) transfer characteristics of low-voltage IZO:Al TFTs.

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Al doping percentage	Treatment or not	Current on/off ratio (10⁶)	V_TH (V)	SS (V/dec)	μ (cm²/(V·s))	D_total (10¹² cm^–2 eV^–1)
0%	No	3.8	5.67	0.72	3.9	2.38
0%	Yes	4.1	5.5	0.61	5.6	1.98
1%	No	8	6.6	0.64	3.5	2.09
1%	Yes	10	6.35	0.57	4.2	1.84
3%	No	4.8	10.2	0.69	1.78	2.27
3%	Yes	4.8	7.97	0.59	1.87	1.91
5%	No	3.9	12.72	0.69	0.81	2.27
5%	Yes	4.3	9.24	0.6	1.32	1.95

Table 1. Electrical properties of IZO:Al TFTs.

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μ (cm²/(V·s))	V_G range (V)	V_ON (V)	I_ON/I_OFF	V_TH (V)	SS (V/dec)	D_total(10¹² cm^–2eV^–1)	Ref.
4.6	–0.5 to 1.5	–0.08	1.4 × 10⁴	0.5	0.17	1.6	This work
0.06	–0.5 to 1	–0.3	>10⁵	0.2	0.085	12	[33]
0.15	–0.5 to 1	–0.25	~10⁴	0.0013	/	/	[35]
3.2	–1 to 2	0.18	10⁶	/	0.073	/	[36]
7.23	–1 to 3	0	3.06 × 10⁶	1.32	/	/	[37]
13.4	–1 to 3	–0.7	>10⁵	0.44	/	/	[38]
1.05	–5 to 5	0.2	10⁷	0.18	0.105	/	[39]
5.48	–2 to 6	/	10⁷	0.72	0.33	9	[40]

Table 2. Electrical performance of low-voltage, solution-processed oxide TFTs.

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