• Journal of Inorganic Materials
  • Vol. 36, Issue 5, 492 (2021)
Hui XIANG1,2, Hui QUAN1, Yiyuan HU1, Weiqian ZHAO1..., Bo XU2,3 and Jiang YIN2|Show fewer author(s)
Author Affiliations
  • 11. School of Mathematics and Physics, Hubei Polytechnic University, Huangshi 435003, China
  • 22. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • 33. School of Sciences, China Pharmaceutical University, Nanjing 211198, China
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    DOI: 10.15541/jim20200346 Cite this Article
    Hui XIANG, Hui QUAN, Yiyuan HU, Weiqian ZHAO, Bo XU, Jiang YIN. Piezoelectricity of Graphene-like Monolayer ZnO and GaN[J]. Journal of Inorganic Materials, 2021, 36(5): 492 Copy Citation Text show less
    Crystal structure and phonon spectra of monolayer g-ZnO and g-GaN
    1. Crystal structure and phonon spectra of monolayer g-ZnO and g-GaN
    Band structures of monolayers g-ZnO (a) and g-GaN (b)
    2. Band structures of monolayers g-ZnO (a) and g-GaN (b)
    Monolayers g-ZnO (a) and g-GaN (b) polarization as a function of strain strength when applied uniaxial strain along the armchair direction
    3. Monolayers g-ZnO (a) and g-GaN (b) polarization as a function of strain strength when applied uniaxial strain along the armchair direction
    Total densities of states (TDOS) and partial DOS (PDOS) of monolayers g-ZnO (a) and g-GaN (b) under the conditions of 1% tensile strain along the armchair direction
    4. Total densities of states (TDOS) and partial DOS (PDOS) of monolayers g-ZnO (a) and g-GaN (b) under the conditions of 1% tensile strain along the armchair direction
    MaterialClamped-ionRelaxed-ion
    C11C12ΔC11C12Δ
    g-ZnO1093575865729
    g-GaN157371201355877
    h-BN[6]3005324729162229
    Graphene[26]---35860298
    Table 1. Elastic stiffness constants C11 and C12 (N·m-1) of Clamped-ion and Relaxed-ion components for monolayers g-ZnO and g-GaN) against that of h-BN and graphene (Δ= C11 - C12)
    MaterialClamped-ionRelaxed-ion
    e11d11e11d11
    g-ZnO1.72.32.79.4
    g-GaN2.42.01.72.2
    Bulk ZnO[2]---9.9 (d33)
    Bulk GaN[27]---3.1 (d33)
    h-BN[6]3.71.51.40.6
    Table 2. Calculated Clamped- and Relaxed-ion e11 (×10-10, C·m-1) and d11 (pm·V-1) of g-ZnO and g-GaN against piezoelectric coefficients of wurtzite bulk and graphene-like monolayer BN (h-BN)
    Hui XIANG, Hui QUAN, Yiyuan HU, Weiqian ZHAO, Bo XU, Jiang YIN. Piezoelectricity of Graphene-like Monolayer ZnO and GaN[J]. Journal of Inorganic Materials, 2021, 36(5): 492
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