Research progress of 2 μm Ho single-doped solid laser and application of ZnGeP2 on middle-long-wave infrared (Invited)

Gaoyou Liu; Disheng Wei; Yi Chen; Ke Yang; Shuyi Mi; Junhui Li; Chao Yang; Ruixue Wang; Xiaoming Duan; Tongyu Dai; Baoquan Yao; Youlun Ju; Yuezhu Wang

doi:10.3788/IRLA20201056

Journals >Infrared and Laser Engineering >Volume 49 >Issue 12 >Page 20201056 > Article

Infrared and Laser Engineering
Vol. 49, Issue 12, 20201056 (2020)

Research progress of 2 μm Ho single-doped solid laser and application of ZnGeP₂ on middle-long-wave infrared (Invited)

Gaoyou Liu, Disheng Wei, Yi Chen, Ke Yang, Shuyi Mi, Junhui Li, Chao Yang, Ruixue Wang, Xiaoming Duan, Tongyu Dai, Baoquan Yao^*, Youlun Ju, and Yuezhu Wang

Author Affiliations

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

show less

DOI: 10.3788/IRLA20201056 Cite this Article

Gaoyou Liu, Disheng Wei, Yi Chen, Ke Yang, Shuyi Mi, Junhui Li, Chao Yang, Ruixue Wang, Xiaoming Duan, Tongyu Dai, Baoquan Yao, Youlun Ju, Yuezhu Wang. Research progress of 2 μm Ho single-doped solid laser and application of ZnGeP₂ on middle-long-wave infrared (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201056 Copy Citation Text

show less

Fig. 1. [in Chinese]

Download full size | View in the Article

Fig. 2. [in Chinese]

Download full size | View in the Article

Fig. 3. [in Chinese]

Download full size | View in the Article

Fig. 4. [in Chinese]

Download full size | View in the Article

Fig. 5. [in Chinese]

Download full size | View in the Article

Fig. 6. [in Chinese]

Download full size | View in the Article

Fig. 7. [in Chinese]

Download full size | View in the Article

Crystal	Nonlinear coefficient/pm·V⁻¹	Transparency range/µm	Thermal conductivity/W·m⁻¹·K⁻¹	Damage threshold/MW·cm⁻²
ZnGeP₂	d₃₆=75	0.7-12	35	55.6 (1.064 µm, 10 ns)
BaGa₄Se₇	d₁₁=24.3 d₁₃=20.4	0.47-18	0.74∥a 0.64∥b 0.56∥c	557 (1.064 µm, 5 ns)
KTiOPO₄	d₁₅=1.9, d₂₄=3.6 d₃₃=16.9	0.35-4.0	2∥a 3∥b 3.3∥c	500 (1.064 µm, 10 ns)
PPKTP	d₃₃=16.8	0.28-4.5	2∥a 3∥b 3.3∥c	900 (1.064 µm, 5 ns)
KTiOAsO₄	d₁₅=4.2, d₂₄=2.8 d₃₃=16.2	0.35-5.2	1.8∥a 1.9∥b 2.1∥c	>500 (1.064 µm, 10 ns)
LiNbO₃	d₂₂=2.1, d₃₁=4.3, d₃₃=27.2	0.35-4.5	5.6	120 (1.064 µm, 10 ns)
PPLN	d₃₃=27.2	0.33-5.5	5	200 (1.064 µm, 10 ns)
MgO:PPLN	d₁₃=14.8	0.36-5	4.4	600 (1064 nm,9 ns)
AgGaS₂	d₃₆=12.6	0.47-13	1.4∥c 1.5⊥c	34 (1.064 µm, 15 ns)
AgGaSe₂	d₃₆=39.5	0.76-18	1.0∥c 1.1⊥c	13 (2.0 µm, 30 ns)
LiGaS₂	d₃₁=5.8	0.32-11.6	6~8	>240 (1.064 µm, 14 ns)
LiInSe₂	d₃₁=11.78	0.46-14	6.74∥x 8.54⊥z	40 (1.064 µm, 10 ns)
CdSe	d₃₁=18	0.75-25	6.9∥c 6.2⊥c	56 (2.09 µm, 46 ns)
GaSe	d₂₂=54	0.62-20	16.2	30 (1.064 µm, 10 ns)
CdSiP₂	d₃₆=84.5	0.52-9	13.6	41 (1.064 µm, 8 ns)
OP-GaP	d₁₄=70.6	0.5-12	110	>104 (2.09 µm, 12 ns)
OP-GaAs	d₁₄=94	0.86-18	55	>38 (2.09 µm, 50 ns)

Table 1.

Physical properties of some mid/long-wave infrared nonlinear crystals

部分中长波红外非线性晶体的物理特性

Download Citation

Save the article for my favorites

Paper Information