• Photonics Research
  • Vol. 11, Issue 10, 1657 (2023)
Xinyu Liu1, Shaoxiong Wu1,2, Xiaoxue Cao1,3, Feng Tian1,2..., Srikrishna Chanakya Bodepudi1, Muhammad Malik1, Chao Gao3, Li Peng1,4,*, Huan Hu2,5,* and Yang Xu1,2,6,*|Show fewer author(s)
Author Affiliations
  • 1School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
  • 2ZJU-UIUC Institute, International Campus, Zhejiang University, Haining 314400, China
  • 3Department of Polymer Science and Engineering, MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Key Laboratory of Adsorption and Separation Materials & Technologies of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
  • 4e-mail: l-peng@zju.edu.cn
  • 5e-mail: huanhu@intl.zju.edu.cn
  • 6e-mail: yangxu-isee@zju.edu.cn
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    DOI: 10.1364/PRJ.496848 Cite this Article Set citation alerts
    Xinyu Liu, Shaoxiong Wu, Xiaoxue Cao, Feng Tian, Srikrishna Chanakya Bodepudi, Muhammad Malik, Chao Gao, Li Peng, Huan Hu, Yang Xu, "Plasmon resonance-enhanced graphene nanofilm-based dual-band infrared silicon photodetector," Photonics Res. 11, 1657 (2023) Copy Citation Text show less

    Abstract

    Graphene-based photodetectors have attracted much attention due to their unique properties, such as high-speed and wide-band detection capability. However, they suffer from very low external quantum efficiency in the infrared (IR) region and lack spectral selectivity. Here, we construct a plasmon-enhanced macro-assembled graphene nanofilm (nMAG) based dual-band infrared silicon photodetector. The Au plasmonic nanostructures improve the absorption of long-wavelength photons with energy levels below the Schottky barrier (between metal and Si) and enhance the interface transport of electrons. Combined with the strong photo-thermionic emission (PTI) effect of nMAG, the nMAG–Au–Si heterojunctions show strong dual-band detection capability with responsivities of 52.9 mA/W at 1342 nm and 10.72 mA/W at 1850 nm, outperforming IR detectors without plasmonic nanostructures by 58–4562 times. The synergy between plasmon–exciton resonance enhancement and the PTI effect opens a new avenue for invisible light detection.
    I=AeffA*T2exp(qϕBkBT)[expq(VIR)nkBT1],

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    dVdlnI=RI+nkBTq,

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    H(I)=VnkBTqln(IAeffA*T2),

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    H(I)=RI+nϕB,

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    Xinyu Liu, Shaoxiong Wu, Xiaoxue Cao, Feng Tian, Srikrishna Chanakya Bodepudi, Muhammad Malik, Chao Gao, Li Peng, Huan Hu, Yang Xu, "Plasmon resonance-enhanced graphene nanofilm-based dual-band infrared silicon photodetector," Photonics Res. 11, 1657 (2023)
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