[1] S Nakamura, T Mukai, M Senoh et al. Candela-class high-brightness ingan/algan double-heterostructure blue-light-emitting diodes. Appl Phys Lett, 64, 1687(1994).
[2] H X Jiang, J Y Lin. Nitride micro-LEDs and beyond — a decade progress review. Opt Express, 21, A475(2013).
[3] J M Li, Z Liu, Z Q Liu et al. Advances and prospects in nitrides based light-emitting-diodes. J Semicond, 37, 061001(2016).
[4] J J D McKendry, D Massoubre, S Zhang et al. Visible-light communications using a CMOS-controlled micro-light-emitting-diode array. J Lightwave Technol, 30, 61(2012).
[5] H Qian, S Zhao, S Z Cai et al. Digitally controlled micro-LED array for linear visible light communication systems. IEEE Photonics J, 7, 7901508(2015).
[6] W R Liu, C W Yeh, C H Huang et al. (Ba, Sr)Y2Si2Al2O2N5: Eu2+: a novel near-ultraviolet converting green phosphor for white light-emitting diodes. J Mater Chem, 21, 3740(2011).
[7] H P T Nguyen, K Cui, S Zhang et al. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes. Nano Lett, 12, 1317(2012).
[8] Z Zhuang, X Guo, B Liu et al. High color rendering index hybrid III-nitride/nanocrystals white light-emitting diodes. Adv Funct Mater, 26, 36(2016).
[9] T H Lin, S J Wang, Y C Tu et al. Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes. Solid-State Electron, 107, 30(2015).
[10] M A Tsai, P Yu, C L Chao et al. Efficiency enhancement and beam shaping of GaN–InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays. IEEE Photonics Technol Lett, 21, 257(2009).
[11] G Tan, Y Huang, M C Li et al. High dynamic range liquid crystal displays with a mini-LED backlight. Opt Express, 26, 16572(2018).
[12] C Gossler, C Bierbrauer, R Moser et al. GaN-based micro-LED arrays on flexible substrates for optical cochlear implants. J Phys D, 47, 205401(2014).
[13] C L Qi, Y Huang, T Zhan et al. Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure. J Semicond, 38, 084005(2017).
[14] R Smith, B Liu, J Bai et al. Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters. Nano Lett, 13, 3042(2013).
[15] Q Sun, W Yan, M Feng et al. GaN-on-Si blue/white LEDs: epitaxy, chip, and package. J Semicond, 37, 044006(2016).
[16] W Chen, G Hu, J Lin et al. High-performance, single-pyramid micro light-emitting diode with leakage current confinement layer. Appl Phys Express, 8, 032102(2015).
[17] G Li, W Wang, W Yang et al. GaN-based light-emitting diodes on various substrates: a critical review. Rep Prog Phys, 79, 056501(2016).
