[1] WHITE R V. PMBus: a decade of growth: an open-standards success [J]. IEEE Power Elec Mag, 2014, 1(3): 33-39.
[2] SAITO W, TAKADA Y, KURAGUCHI M, et al. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior [J]. IEEE Trans Elec Dev, 2003, 50(12): 2528-2531.
[3] SINGH S, SHRIVASTAV A, BHATTACHARYA S. GaN FET based CubeSat electrical power system [C] // IEEE APEC. Charlotte, NC, USA. 2015: 1388-1395.
[6] HWANG Y H, HSIEH Y L, LEI L, et al. Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors [J]. ECSTrans, 2014, 61(4): 205-210.
[8] PUZYREV Y S, TUTTLE B R, SCHRIMPF R D, et al. Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors [J]. Appl Phys Lett, 2010, 96(5): 053505.
[9] JIANG R, ZHANG E X, MCCURDY M W, et al. Dose-rate dependence of the total-ionizing-dose response of GaN-based HEMTs [J]. IEEE Trans Nucl Sci, 2018, 66(1): 170-176.
[10] SCHWARZ C, YADAV A, SHATKHIN M, et al. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors [J]. Appl Phys Lett, 2013, 102(6): 062102.
[11] YADAV A, FLITSIYAN E, CHERNYAK L, et al. Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors [J]. Radiation Effects & Defects in Solids, 2015, 170(5): 1-9.
[12] UEMOTO Y, HIKITA M, UENO H, et al. A normally-off AlGaN/GaN transistor with RonA=2.6 mΩ·cm2 and BVds =640 V using conductivity modulation [C] // IEDM. San Francisco, CA, USA. 2006: 1-4.
[13] SEEHRA S S, SLUSARK W J. The effect of operating conditions on the radiation resistance of VDMOS power FETs [J]. IEEE Trans Nucl Sci, 1982, 29(6): 1559-1563.