低阻硅衬底上形成的低损耗共平面波导传输线LOW-LOSS CPW LINE ON LOW-RESISTIVITY SILICON

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

[1] Luy J F ,Strohm K M, Sasse E. Si/SiGe MMIC technology [C]. Microwave Symposium Digest, 1994, 3: 1755-1757.

[2] Veljko M, Michael G, Edwin D B, et al. Micromachined microwave transmiss-ion lines in CMOS technology[J]. IEEE Trans. Microwave Theory Tech., 1997, 45: 630-635.

[3] Nam C M, Kwon Y S. High-performance planar inductor on thick oxidized porous silicon (OPS) substrate[J]. IEEE Microwave Guided Waved Lett., 1997, 17: 236-238.

[4] Peres H E M, Femandez F, Ramirez J. High resistivity silicon layers obtained by hydrogen ion implantation[J]. J. Phys., 1997, 27 A (4): 237-239.

[5] Guo F M, Zhu Z Q, Long Y F, et al. Study on low voltage actuated MEMS rf capacitive switches[J]. Sensors and Actuators A, 2003, 108: 128-133.

[6] Park Jeong-Yong, Lee Jong-Hyun. Characterization of 10um thick porous silicon dioxide obtained by complex oxidation process for RF application [J]. Materials Chemistry and Physics, 2003, 82: 134-139.

[7] Kim Han-Su , Chong Kyuchul , Xie Ya-Hong. The promising role of porous Si in mixed-signal integrated circuit technology [J]. Phys.Stat.Sol.(a), 2003, 197: 269-274.