低阻硅衬底上形成的低损耗共平面波导传输线LOW-LOSS CPW LINE ON LOW-RESISTIVITY SILICON

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 23 >Issue 5 >Page 357 > Article

Journal of Infrared and Millimeter Waves
Vol. 23, Issue 5, 357 (2004)

低阻硅衬底上形成的低损耗共平面波导传输线LOW-LOSS CPW LINE ON LOW-RESISTIVITY SILICON

[in Chinese]¹, [in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 低阻硅衬底上形成的低损耗共平面波导传输线LOW-LOSS CPW LINE ON LOW-RESISTIVITY SILICON[J]. Journal of Infrared and Millimeter Waves, 2004, 23(5): 357 Copy Citation Text

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Abstract

Low loss and high performance RF/microwave CPW(coplanar waveguide)were fabricated on thicker porous silicon(PS)/ oxidized porous silicon(OPS) substrate associated with polyimide coating to improve smoothness. PS films with different thickness were formed on both N and P-type Si, and the CPW losses on them were discussed. The CPW loss on thick PS is intimately close to quartz, and much lower than the combined substrate of poly-Si / oxidized poly-Si growing on a 2000Ω·cm Si wafer. The insertion loss on PS was lower than 5dB/1.2cm in the range of 0-33GHz, and less than 7.5dB/1.2cm in 33-40GHz.

Keywords

CPW（coplanar waveguide）insertion loss PS/OPS RF/microwave

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