• Advanced Photonics
  • Vol. 4, Issue 2, 026002 (2022)
Zilong Zhang1、2、3、*, Yuan Gao1、2、3, Xiangjia Li4, Xin Wang1、2、3, Suyi Zhao1、2、3, Qiang Liu5、6, and Changming Zhao1、2、3
Author Affiliations
  • 1Beijing Institute of Technology, School of Optics and Photonics, Beijing, China
  • 2Ministry of Education, Key Laboratory of Photoelectronic Imaging Technology and System, Beijing, China
  • 3Ministry of Industry and Information Technology, Key Laboratory of Photonics Information Technology, Beijing, China
  • 4Arizona State University, School for Engineering of Matter, Transport and Energy, Department of Aerospace and Mechanical Engineering, Tempe, Arizona, United States
  • 5Ministry of Education, Key Laboratory of Photonic Control Technology (Tsinghua University), Beijing, China
  • 6Tsinghua University, Department of Precision Instrument, State Key Laboratory of Precision Measurement Technology and Instruments, Beijing, China
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    DOI: 10.1117/1.AP.4.2.026002 Cite this Article Set citation alerts
    Zilong Zhang, Yuan Gao, Xiangjia Li, Xin Wang, Suyi Zhao, Qiang Liu, Changming Zhao. Second harmonic generation of laser beams in transverse mode locking states[J]. Advanced Photonics, 2022, 4(2): 026002 Copy Citation Text show less
    Several examples of the fundamental frequency beam patterns in TML states to show the possibility of the generation of TML beams by a microchip cavity. (a) Simulations of the far-field beam pattern of TML modes; (b) corresponding experimental results of the far-field beam patterns of TML modes. Here, α=exp(iπ/2) and β=exp(iπ/4).
    Fig. 1. Several examples of the fundamental frequency beam patterns in TML states to show the possibility of the generation of TML beams by a microchip cavity. (a) Simulations of the far-field beam pattern of TML modes; (b) corresponding experimental results of the far-field beam patterns of TML modes. Here, α=exp(iπ/2) and β=exp(iπ/4).
    The mode compositions in (a), (b), and (c) are HG0,1⊕HG1,0, HG0,2⊕HG2,0, and HG0,1⊕HG2,0. Here, ⊕ represents the incoherent superposition of the modes. The first and second rows are far-field patterns of two basic HG modes and the third row is the direct intensity superposition of the above two rows.
    Fig. 2. The mode compositions in (a), (b), and (c) are HG0,1HG1,0, HG0,2HG2,0, and HG0,1HG2,0. Here, represents the incoherent superposition of the modes. The first and second rows are far-field patterns of two basic HG modes and the third row is the direct intensity superposition of the above two rows.
    Far-field SHG beam patterns of various TML beams marked on the Poincaré sphere. (a) The point (θ,ϕ) on the Poincaré sphere represents a particular TML state of ETML=XGnorth|cos(θ/2)|+XGsouth|sin(θ/2)|·exp(iϕ). (b) and (c) The corresponding far-field SHG beam patterns of different TML states with HG0,1⊕HG1,0 and HG0,2⊕HG2,0, respectively.
    Fig. 3. Far-field SHG beam patterns of various TML beams marked on the Poincaré sphere. (a) The point (θ,ϕ) on the Poincaré sphere represents a particular TML state of ETML=XGnorth|cos(θ/2)|+XGsouth|sin(θ/2)|·exp(iϕ). (b) and (c) The corresponding far-field SHG beam patterns of different TML states with HG0,1HG1,0 and HG0,2HG2,0, respectively.
    Simulated far-field beam patterns of SHG beams corresponding to different TML beams. In column VIII, the TML beams’ equations based on Eq. (1) are given. In rows (a) to (g) and rows (h) to (j), different far-field patterns of SHG beams of transverse mode locking states with two HG and LG modes are given, respectively. Here, η=exp(iϕ). In row (k), the exact values of the locking phase difference ϕ are given.
    Fig. 4. Simulated far-field beam patterns of SHG beams corresponding to different TML beams. In column VIII, the TML beams’ equations based on Eq. (1) are given. In rows (a) to (g) and rows (h) to (j), different far-field patterns of SHG beams of transverse mode locking states with two HG and LG modes are given, respectively. Here, η=exp(iϕ). In row (k), the exact values of the locking phase difference ϕ are given.
    Variations of two SHG beam patterns of TML beams in the near field. The upper one is the SHG beam of the TML beam of HG2,0+exp(i·3π/8)HG1,1, and the lower one is the SHG beam of TML beam of LG0,3+LG0,−3.
    Fig. 5. Variations of two SHG beam patterns of TML beams in the near field. The upper one is the SHG beam of the TML beam of HG2,0+exp(i·3π/8)HG1,1, and the lower one is the SHG beam of TML beam of LG0,3+LG0,3.
    Diagram of (a) the experimental principle and (b) setup of the SHG process of TML beams. In panel (a), 1: Nd:YAG microchip; 2: Cr:YAG microchip; 3: LTO, LiTaO3 microchip; 4: DBS, dichroic beam splitter; 5: 532 nm filter; 6: 1064 nm filter; and a, b, c represent the crystallographic axes; c is also the optical axis. (b) The experimental setup and some beam patterns of both the fundamental frequency and SHG beams.
    Fig. 6. Diagram of (a) the experimental principle and (b) setup of the SHG process of TML beams. In panel (a), 1: Nd:YAG microchip; 2: Cr:YAG microchip; 3: LTO, LiTaO3 microchip; 4: DBS, dichroic beam splitter; 5: 532 nm filter; 6: 1064 nm filter; and a, b, c represent the crystallographic axes; c is also the optical axis. (b) The experimental setup and some beam patterns of both the fundamental frequency and SHG beams.
    The experimental and simulated results for the SHG of TML beams that are composed of LG0,1+LG0,−l modes. (a)–(c) The combinations are LG0,2+LG0,−2, LG0,3+LG0,−3, and LG0,4+LG0,−4, respectively. (a1)–(c1) and (a4)–(c4) Experimentally measured far-field beam patterns of TML beams and SHG beams. (a2)–(c2), (a3)–(c3) and (a5)–(c5), (a6)–(c6) are the corresponding simulated far-field patterns and phases.
    Fig. 7. The experimental and simulated results for the SHG of TML beams that are composed of LG0,1+LG0,l modes. (a)–(c) The combinations are LG0,2+LG0,2, LG0,3+LG0,3, and LG0,4+LG0,4, respectively. (a1)–(c1) and (a4)–(c4) Experimentally measured far-field beam patterns of TML beams and SHG beams. (a2)–(c2), (a3)–(c3) and (a5)–(c5), (a6)–(c6) are the corresponding simulated far-field patterns and phases.
    The experimental and simulated results for the SHG of TML beams that are composed of HGm,n modes. The exact combinations of basic modes for each TML state are shown on the left side of each row. Here, α=exp(iπ/2), β=exp(iπ/4), γ=exp(i3π/8), and δ=exp(i3π/4).
    Fig. 8. The experimental and simulated results for the SHG of TML beams that are composed of HGm,n modes. The exact combinations of basic modes for each TML state are shown on the left side of each row. Here, α=exp(iπ/2), β=exp(iπ/4), γ=exp(i3π/8), and δ=exp(i3π/4).
    Zilong Zhang, Yuan Gao, Xiangjia Li, Xin Wang, Suyi Zhao, Qiang Liu, Changming Zhao. Second harmonic generation of laser beams in transverse mode locking states[J]. Advanced Photonics, 2022, 4(2): 026002
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