Author Affiliations
1School of Opto-electronic Engineering, Zaozhuang University, Zaozhuang 277160, China2Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China3School of Information Science and Engineering, Zaozhuang University, Zaozhuang 277160, China4School of Electrical and Optoelectronic Engineering, West Anhui University, Lu’an 237000, China5College of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China6e-mail: zqsun1990@163.com7e-mail: lianglanju123@163.com8e-mail: yxllj68@126.com9e-mail: wyr66439@163.comshow less
Fig. 1. Schematic illustration of the fabrication of the three proposed biosensors.
Fig. 2. (a) Photomicrograph of a unit cell of the microstructure. Inset: picture of the sample. (b) Schematic of the unit cell, which consists of D and C shapes. The geometric parameters for D shape are R=50 μm and r=40 μm and for C shape are r1=20 μm and d=6 μm. The periodicity is 130 μm. (c) Raman spectrum of graphene. Inset: schematic of the graphene sample. (d) X-ray diffraction (XRD) pattern of the g-C3N4 film. Inset: representative scanning electron microscopy image of g-C3N4.
Fig. 3. Left: schematic illustration of three biosensors. Right: simulated and experimental transmission spectrum of the three samples, (a) MS@CN sample, (b) MS@Gr sample, and (c) MS@HTJ sample.
Fig. 4. Simulated and experimental transmission spectrum of the three samples, (a) MS@CN, (b) MS@Gr, and (c) MS@HTJ, respectively.
Fig. 5. Schematic of the energy band structure under different casein concentrations: (a) g-C3N4, (b) graphene, and (c) heterojunction.
Fig. 6. Dependence of (a) frequency and (b) transmission values on protein concentration increasing from 0 to 1.56 ng/mL. Dependence of (c) frequency and (d) transmission difference values on protein concentration increasing from 0 to 1.56 ng/mL.
Fig. 7. Plots of energy bands along the vertical direction from the front surface to the rear surface of (a) g-C3N4, (d) graphene, and (g) g-C3N4-graphene heterojunction as a function of the positive fixed charges density (Qf) at the surface; activation energy (Ea) near the front surface of (b) g-C3N4, (e) graphene, and (h) C3N4-graphene heterojunction as a function of the positive fixed charge density (Qf) at the surface; electron concentration mapping for Qf=+1012 cm−2 of (c) g-C3N4, (f) graphene, and (i) g-C3N4-graphene heterojunction.
Fig. 8. Phase difference between the bare sensor (C0) and each CC tested for the (a), (d) MS@CN sample, (b), (e) MS@Gr sample, and (c), (f) MS@HTJ sample.
Parameters | | Graphene |
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Electron affinity (eV) | 4.4 | 4.4 | Permittivity | 8 | 13 | Bandgap (eV) | 2.7 | 0 | Doping concentration () | , n-type | , p-type | Electron mobility [] | 20 | 20,000 | Hole mobility [] | 10 | 10,000 | Conduction band effective DOS NC () | | | Valence band effective DOS NV () | | |
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Table 1. Electrical Parameters of Silvaco TCAD Simulation in This Work