[1] Yukio Narukawa, Junya Narita, Takahiko Sakamoto et al.. Ultra-high efficiency white light emitting diodes[J]. Jpn. J. Appl. Phys., 2006, 45(41): L1084~L1086
[2] A. J. Fischer, A. A. Allerman, M. H. Crawford et al.. Device performance of AlGaN-based 240~300 nm deep UV LEDs[C]. Proc. SPIE, 2004, 5530: 38~47
[3] M. Shatalov, A. Chitnis, P. Yadav et al.. Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes[J]. Appl. Phys. Lett., 2005, 86(20): 201109-1~201109-3
[4] N. Narendran, Y. Gu, J. P. Freyssinier et al.. Solid-state lighting: failure analysis of white LEDs[J] . J. Cryst. Growth., 2006, 268: 449~456
[5] Takeshi Yanagisawa, Takeshi Kojima. Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations[J]. Microelectronics Reliability, 2003, 43: 977~980
[6] J. S. Cabalu, A. Bhattacharyya, C. Thomidis et al.. High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy[J]. J. Appl. Phys., 2006, 100: 104506-1~104506-5
[7] W. K. Wang, S. Y. Huang, S. H. Huang et al.. Fabrication and efficiency improvement of micropillar InGaN/Cu light-emitting diodes with vertical electrodes[J]. Appl. Phys. Lett., 2006, 88(18): 181113-1~181113-3
[8] T. Doan,C. Chu, C. Chen et al.. Vertical GaN based light emitting diodes on metal alloy substrate for solid state lighting application[C]. Proc. SPIE, 2006, 6134: 61340G-1~61340G-6
[9] Chao-Chen Cheng, Chen-Fu Chu, Wen-Huan Liu et al.. Highly efficient GaN vertical light emitting diode on metal alloy substrate from near UV to green color for solid state lighting application[C]. Proc. SPIE, 2006, 6337: 633703-1~633703-6
[10] Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng et al.. High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application[J]. J. Cryst. Growth., 2007, 298: 722~724
[11] Chao-Chen Cheng, Chen-Fu Chu, Wen-Huan Liu et al.. Reliability of GaN-based vertical light-emitting diodes on metal alloy substrate for solid state lighting application[C]. Proc. SPIE, 2006, 6337: 633705-1~633705-6
[12] Chunlan Mo, Wenqing Fang, Hechu Liu et al.. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD[J]. J. Cryst. Growth., 2005, 285: 312~317
[13] Xiong Chuanbing, Jiang Fengyi, Fang Wenqing et al.. Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate[J]. Science in China (Series E), 2006, 49(3): 313~321
[14] M. Meneghini, S. Podda, A. Morelli et al.. High brightness GaN LEDs degradation during dc and pulsed stress[J]. Microelectronics Reliability, 2006, 46: 1720~1724