InGaN blue MQW LEDs, grown by metal-organic vapor deposition (MOCVD) on Si (111) substrate, were successfully bonded and transferred onto new substrates Cu and Si. Then, the vertical structure LED chips based on these two kind substrates are made. In the following experiment, the properties of two different GaN LED chips have been tested and researched before the chips were scribed. Current-accelerating aging experiments under 1 A current applied on these chips have been carried out. The results indicate that the chips with Cu substrate are saturated at higher current, having better luminous output efficiency, moreover, its working voltage waved less with driving current, and its power declined less during aging experiments. All these mean that the reliability of chips on Cu substrate is much better. This suggests that the LEDs on Cu substrate have great potential for the application on the high-power LED devices.