• Infrared and Laser Engineering
  • Vol. 36, Issue 2, 214 (2007)
[in Chinese]1、*, [in Chinese]2、3, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Influence of PECVD generated SiO2 and SiNx layers on p-GaN[J]. Infrared and Laser Engineering, 2007, 36(2): 214 Copy Citation Text show less
    References

    [1] BAIK K H,LUO B,PEARTON S J,et al.Influence of SiO2 PECVD layers on p-GaN rectifier[J].Appl Phys Lett,2002,81:803 -806.

    [2] LUO B,JOHNSON W J,REN F,et al.Effect of plasm enhanced chemical vapor deposition of SiNx on n-GaN Schottky rectifiers[J].Solid State Electronics,2002,46:705-710.

    [3] LUO B,BAIK K,REN F,et al.Comparison of the effects of deuterated SiNx films on GaN and GaAs rectifiers[J].SolidState Electron,2002,46:1453-1457.

    [4] Kim Hyunsoo,Kim Dong-joon,Park Seong -Ju,et al.Effect of an oxidized Ni/Au p-contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes[J].Journal of Applied Physics,2000,82(17):1506-1508.

    [5] Hsu Chin -Yuan,Lan Wen -How,Wu.YewChung Sermon Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes[J].Applied Physics Letter,2003,83(12):2447-2449.

    [6] KAO C J,CHEN M C,TUN C J,et al.Comparison of lowtemperature GaN,SiO2,and SiNx as gate insulators on AlGaN/GaN heterostructure field -effect transistors[J].J Appl Phys,2005,98:064506.

    [7] CHOI C S,KIM T H,HONG J H,et al.Effect of deposition condition of PECVD SiO2 on etch rate for GaN-based LED[J].Theories and Applications of Chem Eng,2001,7 (2):5199-5192.

    [8] BAIK K,LUO B,KIM J,et al.Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation[J].Solid -State Electron,2002,46(9):1459-1462.

    [in Chinese], [in Chinese], [in Chinese]. Influence of PECVD generated SiO2 and SiNx layers on p-GaN[J]. Infrared and Laser Engineering, 2007, 36(2): 214
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