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    Journals >Infrared and Laser Engineering >Volume 36 >Issue 2 >Page 214 > Article
    • Infrared and Laser Engineering
    • Vol. 36, Issue 2, 214 (2007)
    Influence of PECVD generated SiO2 and SiNx layers on p-GaN
    1,*, 2,3, and 1
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Influence of PECVD generated SiO2 and SiNx layers on p-GaN[J]. Infrared and Laser Engineering, 2007, 36(2): 214 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese]. Influence of PECVD generated SiO2 and SiNx layers on p-GaN[J]. Infrared and Laser Engineering, 2007, 36(2): 214
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