• Microelectronics
  • Vol. 52, Issue 2, 197 (2022)
MAO Haiyan1, LAI Fan2, XIE Jiazhi2, and ZHANG Jian2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210413 Cite this Article
    MAO Haiyan, LAI Fan, XIE Jiazhi, ZHANG Jian. Research on the Development Trends of Radiation Hardened Technology[J]. Microelectronics, 2022, 52(2): 197 Copy Citation Text show less

    Abstract

    The radiation effect has become a major issue affecting the reliable application of integrated circuits in space. The research progress of radiation resistant reinforcement technology was reviews in this article. Firstly, the radiation resistant reinforcement technology was introduced. Then, the foreign research development and current situation of radiation resistant reinforcement technology were reviewed, and the management approach, technical route, results and progress of the United States in radiation resistant reinforcement technology were introduced. Finally, the progress of the domestic radiation resistant reinforcement technology was introduced. It pointed out that the study of the development of radiation resistant reinforcement technology in the United States could promote the development of radiation resistant reinforcement technology in China. This review had certain significance for the practical application and promotion of anti-irradiation reinforcement technology.
    MAO Haiyan, LAI Fan, XIE Jiazhi, ZHANG Jian. Research on the Development Trends of Radiation Hardened Technology[J]. Microelectronics, 2022, 52(2): 197
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