[1] LUCA A, TRANCA I, DANCHIV A. High precision over current detection for a high side switch [C] // Int Semicond Conf. Sinaia, Romania. 2008: 385-388.
[3] AWWAD A E, DIECKERHOFF S. Short-circuit evaluation and overcurrent protection for SiC power MOSFETs [C] // 17th ECCE Europ. Geneva, Switzerland. 2015: 1-9.
[6] KRONE T, XU C, MERTENS A. Fast and easily implementable detection circuits for short-circuits of power semiconductors [C] // IEEE ECCE. Montreal, Canada. 2015: 2715-2722.
[8] WANG Z Q, SHI X J, XUE Y, et al. Design and performance evaluation of overcurrent protection schemes for silicon carbide (SiC) power MOSFETs [J]. IEEE Trans Indus Elec, 2014, 61(10): 5570-5581.
[9] WANG J, SHEN Z Y, ROLANDO B, et al. Design of a high-band width Rogowski current sensor for gate-drive short-circuit protection of 1.7 kV SiC MOSFET power modules [C] // IEEE 3rd WiPDA. Blacksburg, VA, USA. 2016: 104-107.
[12] PASETTI G, SAPONARA S, TINFENA F, et al. An integrated smart driver for inductive loads with self-monitoring/diagnostic capability [C] // IEEE SPEEDAM. Sorrento, Italy. 2012: 1007-1011.
[14] SAPONARA S, FANUCCI L, PASETTI G, et al. Fully integrated multi-channel inductive load driver for harsh automotive applications [J]. Analog Integr Circ Sig Process, 2016, 88(3): 485-494.