The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultrahigh-performance semiconductor lasers for many key novel applications, as either stand-alone sources or on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb, and other material platforms has been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable, and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz local area network wavelength division multiplexing frequency intervals in the 1300 nm band with record performance parameters, including sidemode suppression ratios as high as 52.7 dB, continuous-wave output power of 26.6 mW (room temperature) and 6 mW (at 55°C), and ultralow relative intensity noise (RIN) of $<-165\mathrm{dB}/\mathrm{Hz}$ (2.5–20 GHz). The devices are also capable of isolator-free operating under very high external reflection levels of up to $-12.3\mathrm{dB}$ while maintaining high spectral purity and ultralow RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, which are thus universally applicable across different material platforms and wavelength bands.