• Microelectronics
  • Vol. 51, Issue 6, 918 (2021)
JIANG Yude1, ZHOU Huifang2, ZHAO Linna1, GAN Xinhui2, GU Xiaofeng1, and JI Jianxin2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210016 Cite this Article
    JIANG Yude, ZHOU Huifang, ZHAO Linna, GAN Xinhui, GU Xiaofeng, JI Jianxin. Study on Breakdown Characteristics of 4H-SiC JBS with JTE Termination[J]. Microelectronics, 2021, 51(6): 918 Copy Citation Text show less
    References

    [3] WANG X D, DENG X C, WANG Y W, et al. Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring [J]. Chinese Phys B, 2014, 23(5): 494-498.

    [4] ZHOU C N, YUE R F, WANG Y, et al. 10-kV 4H-SiC gate turn-off thyristors with space-modulated buffer trench three-step JTE [J]. IEEE Elec Dev Lett, 2018, 39(8): 1199-1202.

    [5] ZHU L, CHOW T P. Analytical modeling of high-voltage 4H-SiC junction barrier Schottky (JBS) rectifiers [J]. IEEE Trans Elec Dev, 2008, 55(8): 1857-1863.

    [6] BROSSELARD P, CAMARA N, BANU V, et al. Bipolar conduction impact on electrical characteristics and reliability of 12-and 35-kV 4H-SiC JBS diodes [J]. IEEE Trans Elec Dev, 2008, 55(8): 1847-1856.

    [7] CHEN F P, ZHANG Y M, ZHANG Y M, et al. Temperature-dependent characteristics of 4H-SiC junction barrier Schottky diodes [J]. Chinese Phys B, 2012, 21(3): 037304.

    [8] DENG X C, CHEN X X, LI C Z, et al. Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers [J]. Chinese Phys B, 2016, 25(8): 087201.

    [9] NIWA H, FENG G, SUDA J, et al. Breakdown characteristics of 15-kV-class 4H-SiC PiN diodes with various junction termination structures [J]. IEEE Trans Elec Dev, 2012, 59(10): 2748-2752.

    [10] GHANDI R, BUONO B, DOMEIJ M, et al. Surface-passivation effects on the performance of 4H-SiC BJTs [J]. IEEE Trans Elec Dev, 2010, 58(1): 259-265.

    [11] HIRAO T, ONOSE H, YASUI K, et al. Edge termination with enhanced field-limiting rings insensitive to surface charge for high-voltage SiC power devices [J]. IEEE Trans Elec Dev, 2020, 67(7): 2850-2853.

    [12] OKAYAMA T, ARTHUR S D, RAO R R, et al. Stability and 2-D simulation studies of avalanche breakdown in 4H-SiC DMOSFETs with JTE [J]. IEEE Trans Elec Dev, 2008, 55(2): 489-494.

    [13] SONG Q, YUAN H, SUN Q, et al. Reverse-bias stress-induced electrical parameters instability in 4H-SiC JBS diodes terminated nonequidistance FLRs [J]. IEEE Trans Elec Dev, 2019, 66(9): 3935-3939.

    JIANG Yude, ZHOU Huifang, ZHAO Linna, GAN Xinhui, GU Xiaofeng, JI Jianxin. Study on Breakdown Characteristics of 4H-SiC JBS with JTE Termination[J]. Microelectronics, 2021, 51(6): 918
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