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    Journals >Acta Optica Sinica >Volume 15 >Issue 11 >Page 1564 > Article
    • Acta Optica Sinica
    • Vol. 15, Issue 11, 1564 (1995)
    Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates
    [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]3
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates[J]. Acta Optica Sinica, 1995, 15(11): 1564 Copy Citation Text show less
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates[J]. Acta Optica Sinica, 1995, 15(11): 1564
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