Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 15 >Issue 11 >Page 1564 > Article

Acta Optica Sinica
Vol. 15, Issue 11, 1564 (1995)

Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates[J]. Acta Optica Sinica, 1995, 15(11): 1564 Copy Citation Text

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Abstract

The deep center-related photoluminescence(PL)in GaAs thin films grown onSi substrates were measured with respect to the changes of temperature. The peak energiesand PL intensities of the 0. 78 eV, 0. 84 eV and 0. 93 eV PL bands as a function oftemperature were studied. It is found that the temperature dependence of the PLintensities obeys the formula as that used for amorphous semiconductors because of theexistonce of localized states. The origins of the PL bands were discussed.

Keywords

deep center GaAs thin films photoluminescence

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