• Chinese Journal of Quantum Electronics
  • Vol. 20, Issue 6, 707 (2003)
[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device[J]. Chinese Journal of Quantum Electronics, 2003, 20(6): 707 Copy Citation Text show less
    References

    [1] Schlenker D, Miyamoto T, Chen Z, et al. Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers [J]. J. Cryst. Growth, 2000, 209:27-36

    [2] Chirlias E, Massies J, Guyaux J L, et al. An efficient way to improve compositional abruptness at the GaAs on GaInAs interface [J]. Appl. Phys. Lett., 1999, 74:3972-3974

    [3] Bugge F, Beister G, Erbert G, et al. Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers [J]. J. Cryst. Growth, 1994, 145:907-910

    [4] Bugge F, Erbert G, et al. 12 W continuous wave diodes lasers at 1120 nm with InGaAs quantum wells [J]. Appl.Phys. Lett., 2001, 79:1965-1967

    [5] Sato M, Zeimer U, et al. Evalution of strained InGaAs/GaAs quantum wells by atomic force microscopy [J]. Appl.Phys. Lett., 1997, 70:1134-1136

    [6] Schlenker D, Pan Z, Miyamato T, et al. Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer [J]. Jpn. J. Appl. Phys., 1999, 38:5023-5027

    [7] Schlenker D, Miyamato T, Chen Z B, et al. Critical layer thickness of 1.2 μm highly stained GaInAs/GaAs quantum wells [J]. J. Cryst. Growth, 2000, 221:503-508

    [8] Nishiyama N, Arai M, Shinada S, et al. 1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)Bsubstrate with high characteristic temperature (To=210 K) [J]. Jpn. J. Appl. Phys., 2000, 39:L1046-L1047

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device[J]. Chinese Journal of Quantum Electronics, 2003, 20(6): 707
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