[1] Schlenker D, Miyamoto T, Chen Z, et al. Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers [J]. J. Cryst. Growth, 2000, 209:27-36
[2] Chirlias E, Massies J, Guyaux J L, et al. An efficient way to improve compositional abruptness at the GaAs on GaInAs interface [J]. Appl. Phys. Lett., 1999, 74:3972-3974
[3] Bugge F, Beister G, Erbert G, et al. Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers [J]. J. Cryst. Growth, 1994, 145:907-910
[4] Bugge F, Erbert G, et al. 12 W continuous wave diodes lasers at 1120 nm with InGaAs quantum wells [J]. Appl.Phys. Lett., 2001, 79:1965-1967
[5] Sato M, Zeimer U, et al. Evalution of strained InGaAs/GaAs quantum wells by atomic force microscopy [J]. Appl.Phys. Lett., 1997, 70:1134-1136
[6] Schlenker D, Pan Z, Miyamato T, et al. Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer [J]. Jpn. J. Appl. Phys., 1999, 38:5023-5027
[7] Schlenker D, Miyamato T, Chen Z B, et al. Critical layer thickness of 1.2 μm highly stained GaInAs/GaAs quantum wells [J]. J. Cryst. Growth, 2000, 221:503-508
[8] Nishiyama N, Arai M, Shinada S, et al. 1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)Bsubstrate with high characteristic temperature (To=210 K) [J]. Jpn. J. Appl. Phys., 2000, 39:L1046-L1047