Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 20 >Issue 6 >Page 707 > Article

Chinese Journal of Quantum Electronics
Vol. 20, Issue 6, 707 (2003)

Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device[J]. Chinese Journal of Quantum Electronics, 2003, 20(6): 707 Copy Citation Text

show less

Abstract

Strain buffer layer and growth interruption were applied in the QW growth by mentalorganic chemical vapor deposition (MOCVD) to improve QW photoluminescence performance. The laser diodes using the QW have very low threshold current densities (43 A/cm2) and high slop efficience (0.34 W/A, per facet).

Keywords

growth interruption laser diodes MOCVD MOCVD strain buffer layer strain quantum well

Download Citation

Save the article for my favorites

Paper Information