Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Chengzhi Ji, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen. Progress in efficient doping of Al-rich AlGaN[J]. Journal of Semiconductors, 2024, 45(2): 021501
- Journal of Semiconductors
- Vol. 45, Issue 2, 021501 (2024)
![(Color online) State of the art of UV-LEDs in the wavelength of 210−320 nm. The wall-plug efficiency values are plotted as reported or calculated from reported voltage, current, and light output power. Data obtained from Refs. [9, 16−47].](/richHtml/jos/2024/45/2/021501/jos_45_2_021501_f1.jpg)
Fig. 1. (Color online) State of the art of UV-LEDs in the wavelength of 210−320 nm. The wall-plug efficiency values are plotted as reported or calculated from reported voltage, current, and light output power. Data obtained from Refs. [9, 16−47].
![(Color online) (a) Schematic band diagram and carrier injection in AlGaN-based UV-LEDs. (b) Equivalent circuit diagram for AlGaN-based UV-LEDs with the flip-chip configuration. The voltage drops are estimated under the current densities of 50−100 A/cm2 [12].](/richHtml/jos/2024/45/2/021501/jos_45_2_021501_f2.jpg)
Fig. 2. (Color online) (a) Schematic band diagram and carrier injection in AlGaN-based UV-LEDs. (b) Equivalent circuit diagram for AlGaN-based UV-LEDs with the flip-chip configuration. The voltage drops are estimated under the current densities of 50−100 A/cm2 [12].
![(Color online) State of the art of (a) conductivity and (b) electron concentration in n-doped Al-rich AlGaN. Data obtained from Refs. [50, 52−65, 70, 74−76].](/Images/icon/loading.gif){kind=icon}
Fig. 3. (Color online) State of the art of (a) conductivity and (b) electron concentration in n-doped Al-rich AlGaN. Data obtained from Refs. [50, 52−65, 70, 74−76].
Fig. 4. (Color online) Theoretical formation energy change of (a) VⅢ and (b) CN as a function of Ⅴ/Ⅲ ratio and growth rate (proportional to the metalorganic flow)[52]. Experimental trade-off of the (c) growth temperature and (d) Ⅴ/Ⅲ ratio to suppress the formation of VⅢ-nSi and CN[53].
Fig. 5. (Color online) (a) Conductivity and (b) electron concentration as a function of Si concentration in n-Al0.7Ga0.3N[59].
Fig. 6. (Color online) (a) The activation energy of Si in Al-rich AlGaN with Al composition higher than 80%[66]. (b) Configuration coordinate diagram of the DX center in Si-doped Al(Ga)N[74].
Fig. 7. (Color online) (a) Activation energy of Mg in dependence of Al composition in AlGaN. Data obtained from Refs. [9, 79−87]. (b) Formation enthalpies of MgGa/MgAl as a function of Al composition in bulk AlGaN under N-rich growth condition[88].
Fig. 8. (Color online) (a) Schematic illustration of valence band for p-type superlattice (SL) doping[92]. (b) The vertical miniband transport of holes in Al0.63Ga0.37N/Al0.46Ga0.54N SLs with a constant barrier thickness of 0.75 nm[96].
Fig. 9. (Color online) (a) Schematic illustration of polarization-induced p-type doping in graded polar heterostructures[79]. (b) Directions of the spontaneous and piezoelectric polarization in strained N-polar AlGaN/GaN and Al-polar AlGaN/AlN heterostructures[98].
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