Sensitive direct-conversion X-ray detectors formed by ZnO nanowire field emitters and β-Ga2O3 photoconductor targets with an electron bombardment induced photoconductivity mechanism

Zhipeng Zhang; Manni Chen; Xinpeng Bai; Kai Wang; Huanjun Chen; Shaozhi Deng; Jun Chen

doi:10.1364/PRJ.438204

Journals >Photonics Research >Volume 9 >Issue 12 >Page 2420 > Article

Photonics Research
Vol. 9, Issue 12, 2420 (2021)

Sensitive direct-conversion X-ray detectors formed by ZnO nanowire field emitters and β-Ga₂O₃ photoconductor targets with an electron bombardment induced photoconductivity mechanism

Zhipeng Zhang, Manni Chen, Xinpeng Bai, Kai Wang, Huanjun Chen, Shaozhi Deng, and Jun Chen^*

Author Affiliations

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

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DOI: 10.1364/PRJ.438204 Cite this Article Set citation alerts

Zhipeng Zhang, Manni Chen, Xinpeng Bai, Kai Wang, Huanjun Chen, Shaozhi Deng, Jun Chen. Sensitive direct-conversion X-ray detectors formed by ZnO nanowire field emitters and β-Ga₂O₃ photoconductor targets with an electron bombardment induced photoconductivity mechanism[J]. Photonics Research, 2021, 9(12): 2420 Copy Citation Text

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